Dual P channel MOSFET HUASHUO HSW6811 20V fast switching suitable for load switch and power circuits
Key Attributes
Model Number:
HSW6811
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
650mV
Type:
P-Channel
Number:
2 P-Channel
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
HSW6811
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6811 is a dual P-channel, 20V fast switching MOSFET designed for high cell density and excellent RDS(ON) and efficiency. It is ideal for most small power switching and load switch applications. The HSW6811 meets RoHS and Green Product requirements and offers super low gate charge and excellent Cdv/dt effect decline through advanced high cell density trench technology. It is available as a Green Device.Product Attributes
- Brand: HS
- Type: Dual P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Trench Technology
- Certifications: RoHS, Green Product
- Package: SOT23-6L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -1.4 | A | |||
| IDM | Pulsed Drain Current2 | -8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | 115 | 130 | m | |
| VGS=-2.5V , ID=-1A | 150 | 180 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.65 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 5 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-2A | 4.3 | nC | ||
| Qgs | Gate-Source Charge | 0.8 | ||||
| Qgd | Gate-Drain Charge | 1 | ||||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=1, ID=-2A | 12 | ns | ||
| Tr | Rise Time | 20 | ns | |||
| Td(off) | Turn-Off Delay Time | 24 | ns | |||
| Tf | Fall Time | 9 | ns | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 280 | pF | ||
| Coss | Output Capacitance | 54 | pF | |||
| Crss | Reverse Transfer Capacitance | 44 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
2410121642_HUASHUO-HSW6811_C845595.pdf
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