Fast switching trench technology P channel MOSFET HUASHUO HSBB60P02 20V device for power conversion
Key Attributes
Model Number:
HSBB60P02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
611pF
Number:
1 P-Channel
Output Capacitance(Coss):
689pF
Input Capacitance(Ciss):
4.883nF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
41nC@4.5V
Mfr. Part #:
HSBB60P02
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB60P02 is a P-channel, 20V fast switching MOSFET from HS Semiconductor, featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HS Semiconductor
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Technology: Trench
- Switching Speed: Fast
Technical Specifications
| Product Summary: HSBB60P02 | ||||||
|---|---|---|---|---|---|---|
| Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -4.5V | -60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -4.5V | -40 | A | |||
| IDM | Pulsed Drain Current | -255 | A | |||
| PD@TC=25 | Total Power Dissipation | 31 | W | |||
| PD@TC=100 | Total Power Dissipation | 12 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 70 | /W | |||
| RJA | Thermal Resistance Junction-Ambient (t ≤10s) | 35 | /W | |||
| RJC | Thermal Resistance Junction-Case | 4 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-20A | 4.3 | 5.5 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V , ID=-20A | 6.5 | 8.5 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -1.0 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-20V , VGS=0V , TJ=25 | 1 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-10A | 55 | S | ||
| Rg | Gate resistance | VGS=0V, VDS=0V, f=1.0MHz | 4.5 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-20A | 41 | nC | ||
| Qgs | Gate-Source Charge | 9.9 | ||||
| Qgd | Gate-Drain Charge | 14 | ||||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-20A | 15 | ns | ||
| Tr | Rise Time | 7 | ns | |||
| Td(off) | Turn-Off Delay Time | 222 | ns | |||
| Tf | Fall Time | 99 | ns | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 4883 | pF | ||
| Coss | Output Capacitance | 689 | pF | |||
| Crss | Reverse Transfer Capacitance | 611 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -60 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-10A , dI/dt=100A/µs , TJ =25 | 25 | nS | ||
| Qrr | Reverse Recovery Charge | 11 | nC | |||
| Ordering Information | ||||||
| Part Number | Package Code | Packaging | ||||
| HSBB60P02 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410122027_HUASHUO-HSBB60P02_C28314516.pdf
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