200V N Channel SGT MOSFET H18N20D with Lead Free Construction and Enhanced Switching Performance
Key Attributes
Model Number:
H18N20D
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
95mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
491pF
Pd - Power Dissipation:
83W
Output Capacitance(Coss):
22pF
Gate Charge(Qg):
9.8nC@10V
Mfr. Part #:
H18N20D
Package:
TO-252
Product Description
H18N20D 200V SGT N-Channel MOSFET
The H18N20D is a 200V N-Channel SGT MOSFET designed for high-speed switching applications. It features fast switching speed, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead Free
Technical Specifications
| Part Number | Package | VDS (V) | RDS(ON) (Typ) (m) | ID (A) | VGS(TH) (V) | Qg (nC) | EAS (mJ) |
| H18N20D | TO-252 | 200 | 95 | 18 | 2.1 | 9.8 | 5 |
| Symbol | Parameter | Rating (Units) | Test Conditions |
| VDS | Drain-to-Source Voltage | 200 V | |
| VGS | Gate-to-Source Voltage | 20 V | |
| ID (TC=25) | Continuous Drain Current | 18 A | |
| ID (TC=100) | Continuous Drain Current | 12.5 A | |
| IDM | Pulsed Drain Current | 25 A | |
| PD | Power Dissipation | 83 W | |
| EAS | Single Pulse Avalanche Energy | 5 mJ | L = 0.4mH, RG = 25 , TC=25 |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 175 | |
| RJC | Thermal Resistance Junction-Case | 1.8 / W | Max |
| RJA | Thermal Resistance Junction-Ambient | 65 / W | Max |
| V(BR)DSS | Drain-Source Breakdown Voltage | 200 V | VGS=0V, ID=250A |
| IDSS (25) | Zero Gate Voltage Drain Current | 1 A | VDS=200V, VGS=0V |
| IDSS (100) | Zero Gate Voltage Drain Current | 100 A | VDS=200V, VGS=0V |
| IGSS | Gate to Source Forward Leakage | 100 nA | VGS=20V, VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -100 nA | VGS=-20V, VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 1 to 3 V | VGS=VDS, ID=250A |
| RDS(on) (VGS=10V, ID=5A) | Static Drain-to-Source On-Resistance | 95 to 120 m | |
| RDS(on) (VGS=4.5V, ID=3A) | Static Drain-to-Source On-Resistance | 106 to 140 m | |
| Ciss | Input Capacitance | 491 pF | VGS=0V, VDS=100V, f=1MHz |
| Coss | Output Capacitance | 22 pF | VGS=0V, VDS=100V, f=1MHz |
| Crss | Reverse Transfer Capacitance | 5.5 pF | VGS=0V, VDS=100V, f=1MHz |
| Rg | Gate Resistance | 5.5 | |
| Qg | Total Gate Charge | 9.8 nC | VDS=10V, ID=5A, VGS=10V |
| Qgs | Gate-to-Source Charge | 1.6 nC | VDS=10V, ID=5A, VGS=10V |
| Qgd | Gate-to-Drain ("Miller") Charge | 3.2 nC | VDS=10V, ID=5A, VGS=10V |
| td(ON) | Turn-on Delay Time | 9 nS | VDS=100V, ID=5A, VGS=10V, RG=10 |
| trise | Rise Time | 5 nS | VDS=100V, ID=5A, VGS=10V, RG=10 |
| td(OFF) | Turn-OFF Delay Time | 13 nS | VDS=100V, ID=5A, VGS=10V, RG=10 |
| tfall | Fall Time | 4 nS | VDS=100V, ID=5A, VGS=10V, RG=10 |
| VSD | Diode Forward Voltage | 0.9 to 1.2 V | IF=20A, VGS=0V |
| trr | Reverse Recovery Time | 60 nS | VR=100V, IF=5A, di/dt=100A/s |
| Qrr | Reverse Recovery Charge | 126 nC | VR=100V, IF=5A, di/dt=100A/s |
2509051530_Huixin-H18N20D_C51883378.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
