High Cell Density Trench Technology MOSFET HUASHUO HSM9926 Dual N Channel 20V Fast Switching Device
Key Attributes
Model Number:
HSM9926
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
2 N-Channel
Input Capacitance(Ciss):
553pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
HSM9926
Package:
SOP-8
Product Description
Product Overview
The HSM9926 is a dual N-channel 20V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| HSM9926 | Drain-Source Voltage (VDS) | 20 | V | ||||
| Gate-Source Voltage (VGS) | 12 | V | |||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 6 | A | ||||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 4 | A | ||||
| Pulsed Drain Current (IDM) | 24 | A | |||||
| Total Power Dissipation (PD@TA=25) | 1.3 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | --- | 62.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=6A | --- | 22 | 28 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=2.5V , ID=5.2A | --- | 34 | 44 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.6 | 0.9 | 1.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | --- | --- | 100 | nA | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | Forward Transconductance (gfs) | VDS=5V , ID=6A | --- | 47 | --- | S | |
| Total Gate Charge (Qg) (4.5V) | VDS=10V , VGS=4.5V , ID=3A | --- | 6.2 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 1.6 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 1.5 | --- | nC | |||
| Input Capacitance (Ciss) | VDS=8V , VGS=0V , f=1MHz | --- | 553 | --- | pF | ||
| Timing Characteristics | Turn-On Delay Time (Td(on)) | VDD=10V , VGEN=4.5V , RGEN=6 ID=1A; RL=10 | --- | 9.6 | --- | ns | |
| Rise Time (Tr) | --- | 6.3 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 30 | --- | ns | |||
| Fall Time (Tf) | --- | 6.5 | --- | ns | |||
| Capacitance | Output Capacitance (Coss) | VDS=8V , VGS=0V , f=1MHz | --- | 144 | --- | pF | |
| Capacitance | Reverse Transfer Capacitance (Crss) | VDS=8V , VGS=0V , f=1MHz | --- | 120 | --- | pF |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM9926 | SOP-8 | 4000/Tape&Reel |
2410121434_HUASHUO-HSM9926_C700975.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
