Trenched N channel MOSFET HUASHUO HSS3400 with super low gate charge and high cell density technology
Key Attributes
Model Number:
HSS3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
597pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.1nC@4.5V
Mfr. Part #:
HSS3400
Package:
SOT-23L
Product Description
Product Overview
The HSS3400 is a high cell density trenched N-channel MOSFET designed for fast switching and efficient operation in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full function reliability. Key features include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSS3400 | Drain-Source Voltage (VDS) | 30 | V | ||||
| Gate-Source Voltage (VGS) | 12 | V | |||||
| Continuous Drain Current (ID) | VGS @ 4.5V, TA=25 | 5.8 | A | ||||
| Continuous Drain Current (ID) | VGS @ 4.5V, TA=70 | 5.0 | A | ||||
| Pulsed Drain Current (IDM) | 24 | A | |||||
| Total Power Dissipation (PD) | TA=25 | 1.4 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | 90 | /W | |||||
| Thermal Resistance Junction-Case (RJC) | 65 | /W | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | V | ||||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=5.8A | 20 | 27 | m | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=5A | 22 | 30 | m | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V, ID=4A | 30 | 45 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 0.7 | 0.9 | 1.4 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=30V, VGS=0V, TJ=25 | 1 | uA | ||||
| Drain-Source Leakage Current (IDSS) | VDS=30V, VGS=0V, TJ=55 | 5 | uA | ||||
| Gate-Source Leakage Current (IGSS) | VGS=12V, VDS=0V | 100 | nA | ||||
| Forward Transconductance (gfs) | VDS=5V, ID=3A | 33 | S | ||||
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, ID=5.5A | 9.1 | nC | ||||
| Gate-Source Charge (Qgs) | 2.1 | ||||||
| Gate-Drain Charge (Qgd) | 2.8 | ||||||
| Turn-On Delay Time (td(on)) | VDD=15V, VGS=10V, RG=3, ID=3A | 3 | ns | ||||
| Rise Time (tr) | 2.5 | ||||||
| Turn-Off Delay Time (td(off)) | 25 | ||||||
| Fall Time (tf) | 4 | ||||||
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | 597 | pF | ||||
| Output Capacitance (Coss) | 66 | ||||||
| Reverse Transfer Capacitance (Crss) | 59 | ||||||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | 5.8 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | 1.2 | V |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSS3400 | SOT-23L | Tape&Reel | 3000 |
2410122017_HUASHUO-HSS3400_C28314504.pdf
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