Complementary N channel P channel MOSFET HUASHUO HSM6901 designed for power conversion and low gate charge
Key Attributes
Model Number:
HSM6901
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.8A;3.7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
32mΩ@10V,4A;70mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
64pF@15V;70pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.378nF@15V;1.447nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
12.5nC@4.5V;9.9nC@4.5V
Mfr. Part #:
HSM6901
Package:
SOP-8
Product Description
Product Overview
The HSM6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSM6901 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Key advantages include super low gate charge, 100% EAS guaranteed, green device availability, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
N-Channel Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.8 | A | |||
| IDM | Pulsed Drain Current2 | 9.6 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 25.5 | mJ | |||
| IAS | Avalanche Current | 22.6 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 to 150 | ||||
| TJ | Operating Junction Temperature Range | -55 to 150 | ||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | --- | 85 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 36 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=4A | --- | --- | 32 | m |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=2A | --- | --- | 38 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=4A | --- | 12.6 | --- | nC |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1378 | --- | pF |
| Coss | Output Capacitance | --- | 86 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 64 | --- | pF |
P-Channel Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | -3.7 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | -3 | A | |||
| IDM | Pulsed Drain Current2 | -7.5 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 35.3 | mJ | |||
| IAS | Avalanche Current | -26.6 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 to 150 | ||||
| TJ | Operating Junction Temperature Range | -55 to 150 | ||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | --- | 85 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 36 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-3A | --- | --- | 70 | m |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | --- | --- | 105 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-4.5V , ID=-3A | --- | 9.86 | --- | nC |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 1447 | --- | pF |
| Coss | Output Capacitance | --- | 97.3 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 70 | --- | pF |
Notes:
- 1 Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Data tested by pulsed, pulse width 300us, duty cycle 2%.
- 3 EAS data shows Max. rating. Test condition for N-Channel: VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A. Test condition for P-Channel: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A.
- 4 Power dissipation is limited by 150 junction temperature.
- 5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121456_HUASHUO-HSM6901_C700994.pdf
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