Trench Technology P channel MOSFET HUASHUO IRLML5203 with Superior CdV dt Effect and Fast Switching
Key Attributes
Model Number:
IRLML5203
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
43mΩ@4.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
95pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
650pF@15V
Pd - Power Dissipation:
1.32W
Gate Charge(Qg):
7.3nC@4.5V
Mfr. Part #:
IRLML5203
Package:
SOT-23
Product Description
Product Overview
The IRLML5203 is a P-channel Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: hs-semi.cn
- Technology: Trench P-channel MOSFET
- Certifications: RoHS, Green Product
- Package: SOT-23
- Packaging: 3000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -3.6 | -3.2 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -2.9 | -2.5 | A | ||
| IDM | Pulsed Drain Current2 | -13 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.32 | 1 | W | ||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | 0.64 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 125 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.02 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-3A | 43 | 60 | m | |
| VGS=-4.5V , ID=-1.5A | 63 | 90 | VGS=-4.5V , ID=-1.5A | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1 | -1.5 | -3 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | 4.32 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-24V , VGS=0V , TJ=55 | -5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 4.8 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 24 | 48 | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-3A | 5.22 | 7.3 | nC | |
| Qgs | Gate-Source Charge | 1.25 | 1.8 | |||
| Qgd | Gate-Drain Charge | 2.3 | 3.2 | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3 ID=-1A | 18.4 | 37 | ns | |
| tr | Rise Time | 11.4 | 21 | |||
| td(off) | Turn-Off Delay Time | 39.4 | 79 | |||
| tf | Fall Time | 5.2 | 10.4 | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 463 | 650 | pF | |
| Coss | Output Capacitance | 82 | 115 | |||
| Crss | Reverse Transfer Capacitance | 68 | 95 | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -3.2 | A | ||
| ISM | Pulsed Source Current2,4 | -13 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
2410121503_HUASHUO-IRLML5203_C518778.pdf
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