80 Amp N Channel MOSFET HUASHUO HSH80N20 200 Volt Suitable for Buck Converter Applications
Key Attributes
Model Number:
HSH80N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
37pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
7.49nF@50V
Pd - Power Dissipation:
370W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSH80N20
Package:
TO-263
Product Description
Product Overview
The HSH80N20 is a high-performance N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed with full function reliability approved
Technical Specifications
| Parameter | Value |
|---|---|
| Model | HSH80N20 |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Id) | 80 A |
| Storage Temperature Range | -55 to 150 |
| Gate-Source Voltage (Vgs) | 20 V |
| Rds(on) (Typ.) | 20.3 m |
| Qg (Typ.) | 74.9 nC |
2410121631_HUASHUO-HSH80N20_C7543767.pdf
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