Durable Huixin H20N50F 500V N Channel MOSFET featuring improved dvdt capability and avalanche testing
Key Attributes
Model Number:
H20N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.92nF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
H20N50F
Package:
TO-220F
Product Description
Product Overview
The H20N50F is a 500V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speed, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead Free
Technical Specifications
| Part Number | Package | Continuous Drain Current (TC=25) | Continuous Drain Current (TC=100) | Drain-to-Source Voltage | Gate-to-Source Voltage | Power Dissipation | RDS(ON) (Typ) | VGS(TH) (Typ) | Input Capacitance (Typ) | Total Gate Charge (Typ) | Diode Forward Voltage (Typ) | Reverse Recovery Time (Typ) |
| H20N50F | TO-220F | 20 A | 12.6 A | 500 V | 30 V | 48 W | 0.23 | 3 V | 1920 pF | 56 nC | 1.2 V | 536 ns |
2508041620_Huixin-H20N50F_C49823496.pdf
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