40V 100A N Channel MOSFET HUASHUO HSBA4048 Ideal for Synchronous Rectification and Power Conversion

Name: 40V 100A N Channel MOSFET HUASHUO HSBA4048 Ideal for Synchronous Rectification and Power Conversion
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: HSBA4048
Availability: InStock

Key Attributes

Model Number: HSBA4048

Product Custom Attributes

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

100A

Operating Temperature -:

-55℃~+150℃

RDS(on):

1.8mΩ@10V,20A

Gate Threshold Voltage (Vgs(th)):

1.6V

Reverse Transfer Capacitance (Crss@Vds):

82pF@20V

Number:

1 N-channel

Input Capacitance(Ciss):

3.972nF@20V

Pd - Power Dissipation:

125W

Gate Charge(Qg):

45nC@4.5V

Mfr. Part #:

HSBA4048

Package:

PRPAK5x6-8L

Product Description

Product Overview

The HSBA4048 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and a continuous drain current of up to 100A, this MOSFET is built with advanced trench technology, offering low gate charge and high current capability. It is ideal for use in Switched-Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. The product is RoHS and Halogen-Free compliant.

Product Attributes

Brand: HS-Semi
Model Series: HSBA4048
Channel Type: N-Channel
Technology: Advanced Trench Technology
Compliance: RoHS and Halogen-Free
Testing: 100% UIS Tested

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				40	V
VGS	Gate-Source Voltage				20	V
ID@TC=25	Continuous Drain Current, VGS @ 10V^1,6				100	A
ID@TC=100	Continuous Drain Current, VGS @ 10V^1,6				82	A
IDM	Pulsed Drain Current²				400	A
EAS	Single Pulse Avalanche Energy³				400	mJ
IAS	Avalanche Current				40	A
PD@TC=25	Total Power Dissipation⁴				125	W
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Thermal Data
RJA	Thermal Resistance Junction-Ambient¹			---	50	/W
RJC	Thermal Resistance Junction-Case¹			---	1	/W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , ID=20A		1.5	1.8	m
RDS(ON)	Static Drain-Source On-Resistance²	VGS=4.5V , ID=20A			2.0	2.6	V
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.6	2.2	V
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=25		---	1	uA
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=55		---	5
IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V		---	100	nA
gfs	Forward Transconductance	VDS=5V , ID=20A		53	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz		1.0	---
Qg	Total Gate Charge (4.5V)	VDS=15V , VGS=10V , ID=20A		45	---	nC
Qgs	Gate-Source Charge			12	---
Qgd	Gate-Drain Charge			18.5	---
Td(on)	Turn-On Delay Time	VDD=15V , VGS=10V , RG=3.3, ID=20A		18.5	---	ns
Tr	Rise Time			9	---
Td(off)	Turn-Off Delay Time			58.5	---
Tf	Fall Time			32	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz		3972	---	pF
Coss	Output Capacitance			1119	---
Crss	Reverse Transfer Capacitance			82	---
Diode Characteristics
IS	Continuous Source Current^1,6	VG=VD=0V , Force Current		---	100	A
VSD	Diode Forward Voltage²	VGS=0V , IS=1A , TJ=25		---	1.2	V

Product Details

Model: HSBA4048

Type: N-Ch 40V Fast Switching MOSFET

Package Outline Dimensions: PRPAK5X6

Applications

SMPS Synchronous Rectification
DC/DC Converters
Or-ing

2410121655_HUASHUO-HSBA4048_C508827.pdf

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