Fast Switching N Channel MOSFET HSK3400 with Excellent RDS ON and High Cell Density Trench Technology
Key Attributes
Model Number:
HSK3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
634pF@15V
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
HSK3400
Package:
SOT-89
Product Description
Product Overview
The HSK3400 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements, featuring advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is available as a Green Device.
Product Attributes
- Brand: HS
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| HSK3400 | Drain-Source Voltage (VDS) | 30 | V | ||||
| Gate-Source Voltage (VGS) | 12 | V | |||||
| Continuous Drain Current (ID) @ TA=25 (VGS @ 4.5V) | 6 | A | |||||
| Continuous Drain Current (ID) @ TA=70 (VGS @ 4.5V) | 5 | A | |||||
| Pulsed Drain Current (IDM) | 24 | A | |||||
| Total Power Dissipation (PD) @ TA=25 | 1.7 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | --- | 75 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=5.9A | --- | 21 | 26 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=5A | --- | 25 | 30 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.9 | 1.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=4.5V , ID=5.8A | --- | 6 | --- | nC | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 634 | --- | pF | ||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 5.2 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | 0.72 | 1.2 | V |
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSK3400 | SOT-89 | 1000/Tape&Reel | 1000 |
2410121531_HUASHUO-HSK3400_C5341681.pdf
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