N Channel MOSFET HUASHUO HSP0016 with High Cell Density Trench Technology and Full Functional Approval
Key Attributes
Model Number:
HSP0016
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+150℃
RDS(on):
47mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
87W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HSP0016
Package:
TO-220
Product Description
Product Overview
The HSP0016 is a fast-switching N-channel MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Model: HSP0016
- Channel Type: N-Ch
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 27 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 17 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.3 | A | |||
| IDM | Pulsed Drain Current2 | 54 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 36.5 | mJ | |||
| IAS | Avalanche Current | 27 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 87 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 1.44 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.098 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 47 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=15A | 50 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -5.52 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 10 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | 100 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=20A | 28.7 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | |||
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=20A | 60 | nC | ||
| Qgs | Gate-Source Charge | 9.7 | ||||
| Qgd | Gate-Drain Charge | 11.8 | ||||
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3 ID=20A | 10.4 | ns | ||
| tr | Rise Time | 46 | ns | |||
| td(off) | Turn-Off Delay Time | 54 | ns | |||
| tf | Fall Time | 10 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 3848 | pF | ||
| Coss | Output Capacitance | 137 | pF | |||
| Crss | Reverse Transfer Capacitance | 82 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 27 | A | ||
| ISM | Pulsed Source Current2,5 | 54 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , TJ=25 | 30 | ns | ||
| Qrr | Reverse Recovery Charge | 37 | nC | |||
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=27A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121455_HUASHUO-HSP0016_C508805.pdf
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