Fast Switching N channel MOSFET HSH18N20 Featuring Low RDS ON and High Cell Density Trench Technology
Key Attributes
Model Number:
HSH18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
2.047nF@25V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSH18N20
Package:
TO-263
Product Description
Product Overview
The HSH18N20 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. Designed for fast switching applications, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| HSH18N20 N-Ch 200V Fast Switching MOSFETs | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 200 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 18 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 11.7 | A |
| IDM | Pulsed Drain Current | 40 | A |
| EAS | Single Pulse Avalanche Energy | 15 | mJ |
| IAS | Avalanche Current | 10 | A |
| PD@TC=25 | Total Power Dissipation | 83 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| RJA | Thermal Resistance Junction-ambient | 60 | /W |
| RJC | Thermal Resistance Junction-Case | 1.1 | /W |
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 200 | V |
| RDS(ON),max | Static Drain-Source On-Resistance (VGS=10V, ID=9A) | 170 | m |
| RDS(ON),max | Static Drain-Source On-Resistance (VGS=4.5V, ID=9A) | 180 | m |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =250uA) | 1.2 to 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=160V, VGS=0V, TJ=25) | 1 | uA |
| IDSS | Drain-Source Leakage Current (VDS=160V, VGS=0V, TJ=55) | 5 | uA |
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0V) | ±100 | nA |
| gfs | Forward Transconductance (VDS=5V, ID=9A) | 22 | S |
| Rg | Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | 2 | |
| Qg | Total Gate Charge (VDS=80V, VGS=10V, ID=9A) | 45 | nC |
| Qgs | Gate-Source Charge | 9 | nC |
| Qgd | Gate-Drain Charge | 10.5 | nC |
| Td(on) | Turn-On Delay Time (VDD=50V, VGS=10V, RG=3.3, ID=9A) | 13 | ns |
| Tr | Rise Time | 8.2 | ns |
| Td(off) | Turn-Off Delay Time | 25 | ns |
| Tf | Fall Time | 11 | ns |
| Ciss | Input Capacitance (VDS=25V, VGS=0V, f=1MHz) | 2047 | pF |
| Coss | Output Capacitance | 109 | pF |
| Crss | Reverse Transfer Capacitance | 70 | pF |
| IS | Continuous Source Current (VG=VD=0V) | 18 | A |
| ISM | Pulsed Source Current | 40 | A |
| VSD | Diode Forward Voltage (VGS=0V, IS=1A, TJ=25) | 1.2 | V |
| trr | Reverse Recovery Time (IF=10A, dI/dt=100A/µs, TJ=25) | 37 | nS |
| Qrr | Reverse Recovery Charge | 103 | nC |
2410121655_HUASHUO-HSH18N20_C5341708.pdf
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