High cell density trenched N channel MOSFET HUASHUO HSH0026 for synchronous buck converter applications
Key Attributes
Model Number:
HSH0026
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
125pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
1.93nF@15V
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
HSH0026
Package:
TO-263
Product Description
Product Overview
The HSH0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density Trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, Full function reliability approved
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSH0026 | Drain-Source Voltage (VDS) | 100 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V1 | 50 | A | |||
| Continuous Drain Current (ID@TC=70) | VGS @ 10V1 | 22 | A | |||
| Pulsed Drain Current (IDM)2 | 75 | A | ||||
| Single Pulse Avalanche Energy (EAS)3 | 780 | mJ | ||||
| Avalanche Current (IAS) | 18 | A | ||||
| Total Power Dissipation (PD@TC=25)4 | 62.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA)1 | (t10S) | --- | 50 | /W | ||
| Thermal Resistance Junction-ambient (RJA)1 | (Steady State) | --- | 2 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 100 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=10V , ID=9A | --- | 16 | 22 | m | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=4.5V , ID=7A | --- | 20 | 28 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=25 | --- | --- | 10 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=55 | --- | --- | 100 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Total Gate Charge (Qg) (10V) | VDS=80V , VGS=10V , ID=7A | --- | 36 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 5 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 10 | --- | nC | ||
| Turn-On Delay Time (td(on)) | VDD=50V , VGS=10V , RG=3.3, ID=7A | --- | 11.5 | --- | ns | |
| Rise Time (tr) | --- | 29 | --- | ns | ||
| Turn-Off Delay Time (td(off)) | --- | 42 | --- | ns | ||
| Fall Time (tf) | --- | 18 | --- | ns | ||
| Capacitance | Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 1930 | --- | pF |
| Output Capacitance (Coss) | --- | 245 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 125 | --- | pF | ||
| Diode Characteristics | Continuous Source Current (IS)1,6 | VG=VD=0V , Force Current | --- | --- | 50 | A |
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
2410121656_HUASHUO-HSH0026_C7543766.pdf
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