60V P channel MOSFET HUASHUO HSP6115 featuring trench technology low gate charge and high cell density for power switching
Key Attributes
Model Number:
HSP6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.635nF@15V
Pd - Power Dissipation:
86.8W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSP6115
Package:
TO-220
Product Description
Product Overview
The HSP6115 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Voltage Rating: 60V
- Technology: Trench
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | -45 | A | |||
| ID@TC=100 | Continuous Drain Current1 | -34 | A | |||
| IDM | Pulsed Drain Current2 | -90 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 101 | mJ | |||
| IAS | Avalanche Current | -45 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 86.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.44 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | 23 | 27 | m | |
| VGS=-4.5V , ID=-12A | 29 | 35 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 23 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | 14 | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | --- | nC | |
| Qgs | Gate-Source Charge | 6.7 | --- | nC | ||
| Qgd | Gate-Drain Charge | 5.5 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | --- | ns | |
| Tr | Rise Time | 23.6 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 100 | --- | ns | ||
| Tf | Fall Time | 6.8 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | --- | pF | |
| Coss | Output Capacitance | 224 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 141 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
3 The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-45A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121456_HUASHUO-HSP6115_C701028.pdf
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