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quality power management using HXY MOSFET AOD413A designed for battery protection and switching applications factory
quality power management using HXY MOSFET AOD413A designed for battery protection and switching applications factory

power management using HXY MOSFET AOD413A designed for battery protection and switching applications

Key Attributes
Model Number: AOD413A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
RDS(on):
31mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
79.5pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
8W
Input Capacitance(Ciss):
1.034nF@20V
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
AOD413A
Package:
TO-252-2L
Product Description

Product Overview

The AOD413A is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS (HXY). Utilizing advanced trench technology, it offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS (HXY)
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Product ID: AOD413A
  • Package: TO-252-2(DPAK)

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Off Characteristic
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID= -250A-40--V
Zero Gate Voltage Drain CurrentIDSSVDS= -40V, VGS=0V---1A
Gate to Body Leakage CurrentIGSSVDS=0V, VGS= 20V--100nA
On Characteristic
Gate Threshold VoltageVGS(th)VDS=VGS, ID= -250A-1.0-1.6-2.5V
Static Drain-Source on-ResistanceRDS(on)VGS= -10V, ID= -8A-3144m
Static Drain-Source on-ResistanceRDS(on)VGS= -4.5V, ID= -5A-4460m
Dynamic Characteristic
Input CapacitanceCissVDS= -20V, VGS=0V, f=1.0MHz-1034-pF
Output CapacitanceCossVDS= -20V, VGS=0V, f=1.0MHz-107-pF
Reverse Transfer CapacitanceCrssVDS= -20V, VGS=0V, f=1.0MHz-79.5-pF
Total Gate ChargeQgVDS= -20V, ID= -5A, VGS= -10V-20-nC
Gate-Source ChargeQgsVDS= -20V, ID= -5A, VGS= -10V-3.5-nC
Gate-Drain (Miller) ChargeQgdVDS= -20V, ID= -5A, VGS= -10V-4.2-nC
Switching Characteristic
Turn-on Delay Timetd(on)VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5-8-ns
Turn-on Rise TimetrVDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5-15-ns
Turn-off Delay Timetd(off)VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5-23-ns
Turn-off Fall TimetfVDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5-9-ns
Drain-Source Diode Characteristic
Maximum Continuous Drain to Source Diode Forward CurrentIS----23A
Maximum Pulsed Drain to Source Diode Forward CurrentISM----40A
Drain to Source Diode Forward VoltageVSDVGS=0V, IS= -10A--0.8-1.2V
Reverse Recovery TimetrrVGS =0V, IS=-5A, di/dt=100A/s-29-ns
Reverse Recovery ChargeQrrVGS =0V, IS=-5A, di/dt=100A/s-20-nC
Absolute Maximum Ratings
Drain-Source VoltageVDS--40--V
Gate-Source VoltageVGS--20-V
Continuous Drain Current, VGS @ 10VID@TC=25--25--A
Continuous Drain Current, VGS @ 10VID@TC=100--12--A
Pulsed Drain CurrentIDM---40-A
Total Power DissipationPD@TC=25---8W
Storage Temperature RangeTSTG--55-150
Operating Junction Temperature RangeTJ--55-150
Thermal Resistance Junction-ambientRJA--62-/W
Thermal Resistance Junction-CaseRJC--18.8-/W

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply

2509181604_HXY-MOSFET-AOD413A_C5261059.pdf

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