N channel MOSFET HUASHUO AO3416 featuring high cell density trench technology and 2KV ESD protection
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
15mΩ@4.5V,6A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
88pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
720mW
Input Capacitance(Ciss):
1.3nF@10V
Gate Charge(Qg):
10.6nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description
Product Overview
The AO3416 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, offering full function reliability. Key features include super low gate charge, excellent Cdv/dt effect decline, advanced high cell density Trench technology, and ESD protection (2KV).
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- ESD Protection: 2KV
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 5.2 | A | |||
| IDM | Pulsed Drain Current2 | 30 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.72 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.46 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 145 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.018 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=6A | 15 | 22 | mΩ | |
| VGS=2.5V , ID=5A | 18 | 26 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.2 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -3.1 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | µA | ||
| VDS=16V , VGS=0V , TJ=55 | 5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±8V , VDS=0V | ±10 | µA | ||
| gfs | Forward Transconductance | VDS=5V , ID=7A | 50 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=4A | 10.6 | nC | ||
| Qgs | Gate-Source Charge | 4.2 | ||||
| Qgd | Gate-Drain Charge | 2.6 | ||||
| Td(on) | Turn-On Delay Time | VDS=10V , VGS=4.5V , RG=3.3Ω ID=4A | 280 | ns | ||
| Tr | Rise Time | 340 | ||||
| Td(off) | Turn-Off Delay Time | 3.76 | ||||
| Tf | Fall Time | 2.24 | ||||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 1300 | pF | ||
| Coss | Output Capacitance | 175 | ||||
| Crss | Reverse Transfer Capacitance | 88 | ||||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Product Summary | ||||||
| Model | N-Ch 20V Fast Switching MOSFETs | AO3416 | ||||
| Package | SOT-23 | |||||
| Ordering Information | Packaging | 3000/Tape&Reel | ||||
2410121434_HUASHUO-AO3416_C5128190.pdf
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