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quality Switching MOSFET HUAYI HYG053N10NS1C2 N Channel Enhancement Mode 100V 95A Power Management Component factory
quality Switching MOSFET HUAYI HYG053N10NS1C2 N Channel Enhancement Mode 100V 95A Power Management Component factory

Switching MOSFET HUAYI HYG053N10NS1C2 N Channel Enhancement Mode 100V 95A Power Management Component

Key Attributes
Model Number: HYG053N10NS1C2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
153pF
Number:
1 N-channel
Output Capacitance(Coss):
1.342nF
Pd - Power Dissipation:
83.3W
Input Capacitance(Ciss):
3.744nF
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
HYG053N10NS1C2
Package:
PDFN5x6-8L
Product Description

Product Overview

The HYG053N10NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 100V/95A with a low on-resistance of 4.6 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free devices are available and compliant with RoHS standards.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Material: Halogen-Free Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--100V
Gate-Source VoltageVGSSTc=25C Unless Otherwise Noted--±20V
Junction Temperature RangeTJTc=25C Unless Otherwise Noted-55-175°C
Storage Temperature RangeTSTGTc=25C Unless Otherwise Noted-55-175°C
Source Current-Continuous (Body Diode)ISTc=25°C, Mounted on Large Heat Sink--95A
Pulsed Drain CurrentIDMTc=25°C--350A
Continuous Drain CurrentIDTc=25°C--95A
Continuous Drain CurrentIDTc=100°C--71.5A
Maximum Power DissipationPDTc=25°C--83.3W
Maximum Power DissipationPDTc=100°C--41.7W
Thermal Resistance, Junction-to-CaseRθJC--1.8-°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on 1in2 FR-4 board.-45-°C/W
Single Pulsed Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.-305-mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= 250μA100--V
Drain-to-Source Leakage CurrentIDSSVDS= 100V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= 250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= 10V,IDS=20A-4.65.3mΩ
Diode Forward VoltageVSDISD=20A,VGS=0V-0.821.2V
Reverse Recovery TimetrrISD=20A,dISD/dt=100A/μs-55-ns
Reverse Recovery ChargeQrr--104-nC
Dynamic Characteristics (Tc =25°C Unless Otherwise Noted)
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-2.3-Ω
Input CapacitanceCissVGS=0V, VDS= 25V, Frequency=1.0MHz-3744-pF
Output CapacitanceCossVGS=0V, VDS= 25V, Frequency=1.0MHz-1342-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS= 25V, Frequency=1.0MHz-153-pF
Turn-on Delay Timetd(ON)VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V-20-ns
Turn-on Rise TimeTrVDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V-53-ns
Turn-off Delay Timetd(OFF)VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V-58-ns
Turn-off Fall TimeTfVDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V-47-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS = 80V, VGS= 10V, IDs= 20A-73-nC
Gate-Source ChargeQgsVDS = 80V, VGS= 10V, IDs= 20A-20-nC
Gate-Drain ChargeQgdVDS = 80V, VGS= 10V, IDs= 20A-23-nC

2410121248_HUAYI-HYG053N10NS1C2_C2986239.pdf

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