Fast switching P channel MOSFET HUASHUO HSP3119 30V with low RDS ON and power management performance
Key Attributes
Model Number:
HSP3119
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.21nF
Number:
1 P-Channel
Output Capacitance(Coss):
1.38nF
Pd - Power Dissipation:
200W
Input Capacitance(Ciss):
12.7nF
Gate Charge(Qg):
210nC@10V
Mfr. Part #:
HSP3119
Package:
TO-220
Product Description
Product Overview
The HSP3119 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers excellent Cdv/dt effect decline. It is designed for high-efficiency power management solutions.
Product Attributes
- Brand: HS-Semi
- Product Series: HSP3119
- Technology: Advanced high cell density Trench technology
- Channel Type: P-Channel
- Voltage Rating: 30V
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -95 | A | |||
| IDM | Pulsed Drain Current2 | -510 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1050 | mJ | |||
| IAS | Avalanche Current | -75 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 (Steady State) | 62 | /W | |||
| RJC | Thermal Resistance Junction-case1 | 0.81 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 2.7 | 3.0 | m | |
| VGS=-4.5V , ID=-20A | 3.5 | 4.2 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-30V , VGS=0V , TJ=125 | -100 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Qg | Total Gate Charge (-10V) | VDD=-15V , VGS=-10V , ID=-20A | 210 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | ||||
| Qgd | Gate-Drain Charge | 3.3 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3, ID=-10A | 17 | ns | ||
| Tr | Rise Time | 6 | ||||
| Td(off) | Turn-Off Delay Time | 21 | ns | |||
| Tf | Fall Time | 39 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 12700 | pF | ||
| Coss | Output Capacitance | 1380 | ||||
| Crss | Reverse Transfer Capacitance | 1210 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -150 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 37 | nS | ||
| Qrr | Reverse Recovery Charge | 30 | nC | |||
2410122016_HUASHUO-HSP3119_C22359262.pdf
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