Power Management N Channel MOSFET HUASHUO HSP4048 40V Fast Switching Suitable for DC DC Converters
Key Attributes
Model Number:
HSP4048
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
210A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
82pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
3.972nF@20V
Pd - Power Dissipation:
178W
Gate Charge(Qg):
45nC@4.5V
Mfr. Part #:
HSP4048
Package:
TO-220
Product Description
HSP4048 N-Ch 40V Fast Switching MOSFETs
The HSP4048 is an N-channel, 40V fast switching MOSFET designed for high-performance applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for demanding power management tasks. This MOSFET is RoHS and Halogen-Free compliant.
Product Overview
The HSP4048 N-channel MOSFET offers fast switching capabilities and a robust 40V drain-source voltage rating. Its advanced trench technology contributes to efficient operation, while the low gate charge and high current capability (up to 210A continuous) make it ideal for power supply units, DC/DC converters, and OR-ing applications. The device is designed for reliability and compliance with environmental standards.
Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Compliance: RoHS and Halogen-Free
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSP4048 | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current, VGS @ 10V (ID@TC=25) | 210 | A | ||||
| Continuous Drain Current, VGS @ 10V (ID@TC=100) | 152 | A | ||||
| Pulsed Drain Current (IDM) | 400 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 400 | mJ | ||||
| Avalanche Current (IAS) | 40 | A | ||||
| Total Power Dissipation (PD@TC=25) | 178 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 50 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 0.7 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=20A | 1.5 | 1.8 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=20A | 2.0 | 2.6 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.2 | V | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 150 | A |
Applications
- SMPS Synchronous Rectification
- DC/DC Converters
- Or-ing
2410121448_HUASHUO-HSP4048_C701029.pdf
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