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quality Green device compliant P channel MOSFET HUASHUO HSP120P03 with fast switching and low on resistance factory
quality Green device compliant P channel MOSFET HUASHUO HSP120P03 with fast switching and low on resistance factory

Green device compliant P channel MOSFET HUASHUO HSP120P03 with fast switching and low on resistance

Key Attributes
Model Number: HSP120P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
530pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.3nF@15V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
-
Mfr. Part #:
HSP120P03
Package:
TO-220
Product Description

Product Overview

The HSP120P03 is a P-channel MOSFET featuring a 30V breakdown voltage and fast switching capabilities. Designed with high cell density trench technology, it offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. It provides super low gate charge, excellent CdV/dt effect decline, and is available as a Green Device.

Product Attributes

  • Brand: HS-Semi
  • Green Device Available
  • RoHS and Green Product requirement compliant
  • 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-20A --- 3.5 3.9 m
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-20A --- 5.1 6 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- --- -1 uA
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=55 --- --- -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=-15V , VGS=-10V , ID=-20A --- 125 --- nC
Qgs Gate-Source Charge --- 12 --- nC
Qgd Gate-Drain Charge --- 31 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-20A --- 14 --- ns
Tr Rise Time --- 12 --- ns
Td(off) Turn-Off Delay Time --- 66 --- ns
Tf Fall Time --- 35 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 7300 --- pF
Coss Output Capacitance --- 819 --- pF
Crss Reverse Transfer Capacitance --- 530 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- -120 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V
Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -120 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -89 A
IDM Pulsed Drain Current -504 A
EAS Single Pulse Avalanche Energy 576 mJ
PD@TC=25 Total Power Dissipation 200 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Typ. Max. Unit
RJA Thermal Resistance Junction-ambient (Steady State) --- 62 /W
RJC Thermal Resistance Junction-case --- 0.81 /W

2410121435_HUASHUO-HSP120P03_C7543763.pdf
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