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quality Switching MOSFET HUAYI HYG007N03LS1C2 Single N Channel Enhancement Mode with Low On State Resistance factory
quality Switching MOSFET HUAYI HYG007N03LS1C2 Single N Channel Enhancement Mode with Low On State Resistance factory

Switching MOSFET HUAYI HYG007N03LS1C2 Single N Channel Enhancement Mode with Low On State Resistance

Key Attributes
Model Number: HYG007N03LS1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
94pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.072nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
HYG007N03LS1C2
Package:
PDFN5x6-8L
Product Description

Product Overview

The HYG007N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low RDS(ON) of 0.63m (typ.) at VGS = 10V and 0.96 m (typ.) at VGS = 4.5V, along with 100% avalanche testing for reliability and ruggedness. Halogen-free options are available.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Certifications: RoHS compliant, Halogen-Free
  • Material: Lead-free (matte tin termination)
  • Package: PDFN5*6-8L

Technical Specifications

ParameterTest ConditionsUnitMinTyp.Max
Drain-Source Breakdown Voltage (BVDSS)VGS=0V, IDS=250AV30--
Drain-Source On-State Resistance (RDS(ON))VGS=10V, IDS=40Am-0.630.8
Drain-Source On-State Resistance (RDS(ON))VGS=4.5V, IDS=40Am-0.961.2
Gate Threshold Voltage (VGS(th))VDS=VGS, IDS=250AV1.21.62.4
Continuous Drain Current (ID)Tc=25CA--220
Continuous Drain Current (ID)Tc=100CA--155
Pulsed Drain Current (IDM)Tc=25CA--880
Maximum Power Dissipation (PD)Tc=25CW--75
Maximum Power Dissipation (PD)Tc=100CW--37.5
Thermal Resistance, Junction-to-Case (RJC)-C/W-2.0-
Thermal Resistance, Junction-to-Ambient (RJA)Surface mounted on FR-4 boardC/W-45-
Single Pulsed Avalanche Energy (EAS)L=0.3mH, Starting TJ=25C, RG=25, VGS=10VmJ-1009-
Input Capacitance (Ciss)VGS=0V, VDS=25V, Frequency=1.0MHzpF-7072-
Output Capacitance (Coss)VGS=0V, VDS=25V, Frequency=1.0MHzpF-1636-
Reverse Transfer Capacitance (Crss)VGS=0V, VDS=25V, Frequency=1.0MHzpF-94-
Total Gate Charge (Qg)VDS=24V, ID=20A, VGS=10VnC-104-
Total Gate Charge (Qg)VDS=24V, ID=20A, VGS=4.5VnC-49-

2410121306_HUAYI-HYG007N03LS1C2_C2904120.pdf

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