HSK3113 P channel MOSFET featuring 30V drain source voltage and fast switching for power management
Key Attributes
Model Number:
HSK3113
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.8nC
Mfr. Part #:
HSK3113
Package:
SOT-89
Product Description
Product Overview
The HSK3113 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSK3113 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -10V1 | -4 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -10V1 | -4 | A | |||
| Pulsed Drain Current (IDM)2 | -25 | A | ||||
| Total Power Dissipation (PD@TA=25)4 | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-10V , ID=-5A | 32 | 40 | m | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-4.5V , ID=-4A | 50 | 62 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.5 | -2.5 | V | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 15 | ||||
| HSK3113 | Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 1130 | pF | ||
| Output Capacitance (Coss) | VDS=-15V , VGS=0V , f=1MHz | 148 | pF | |||
| Reverse Transfer Capacitance (Crss) | VDS=-15V , VGS=0V , f=1MHz | 125 | pF | |||
| HSK3113 | Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | -5 | A | ||
| Pulsed Source Current (ISM)2,5 | -25 | A | ||||
| HSK3113 | Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Model | Thermal Resistance Junction-Ambient (RJA) | Thermal Resistance Junction-Case (RJC)1 |
|---|---|---|
| HSK3113 | 85 /W | 24 /W |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSK3113 | SOT-89 | 1000/Tape&Reel |
2410121630_HUASHUO-HSK3113_C5341682.pdf
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