HYG012N08NS1TA MOSFET Featuring Low RDS ON and 420 Amp Continuous Drain Current for Power Management
Key Attributes
Model Number:
HYG012N08NS1TA
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
420A
RDS(on):
1.2mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
470pF
Number:
1 N-channel
Input Capacitance(Ciss):
12.217nF
Pd - Power Dissipation:
428.5W
Gate Charge(Qg):
240nC@10V
Mfr. Part #:
HYG012N08NS1TA
Package:
TOLL
Product Description
Product Overview
The HYG012N08NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low RDS(ON) of 0.9 m (typ.) at VGS = 10V, 80V/420A rating, and is 100% avalanche tested for reliability. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG012N08NS1TA | Absolute Maximum Ratings (Tc=25C Unless Otherwise Noted) | |||||
| Drain-Source Voltage (VDSS) | 80 | V | ||||
| Gate-Source Voltage (VGSS) | 20 | V | ||||
| Junction Temperature (TJ) | -55 | 175 | C | |||
| Storage Temperature (TSTG) | -55 | 175 | C | |||
| Continuous Drain Current (ID) | Tc=25C | 420 | A | |||
| Continuous Drain Current (ID) | Tc=100C | 297 | A | |||
| Pulsed Drain Current (IDM) | Tc=25C | 1500 | A | |||
| Maximum Power Dissipation (PD) | Tc=25C | 428.5 | W | |||
| Maximum Power Dissipation (PD) | Tc=100C | 214.3 | W | |||
| Thermal Resistance, Junction-to-Case (RJC) | 0.35 | C/W | ||||
| HYG012N08NS1TA | Electrical Characteristics (Tc =25C Unless Otherwise Noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS= 250A | 80 | V | |||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=100A | 0.9 | 1.2 | m | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=80V,VGS=0V | 1 | A | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | 100 | nA | |||
| Diode Forward Voltage (VSD) | ISD=100A,VGS=0V | 0.82 | 1.2 | V | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 12217 | pF | |||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 6886 | pF | |||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 470 | pF | |||
| Total Gate Charge (Qg) | VDS =64V,VGS=10V,IDs=100A | 240 | nC | |||
2409271603_HUAYI-HYG012N08NS1TA_C2923686.pdf
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