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quality Load Switch N Channel MOSFET HUASHUO HSS3404A with Excellent Switching Performance and Low Gate Charge factory
quality Load Switch N Channel MOSFET HUASHUO HSS3404A with Excellent Switching Performance and Low Gate Charge factory

Load Switch N Channel MOSFET HUASHUO HSS3404A with Excellent Switching Performance and Low Gate Charge

Key Attributes
Model Number: HSS3404A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
71pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
582pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
6.9nC@4.5V
Mfr. Part #:
HSS3404A
Package:
SOT-23
Product Description

Product Overview

The HSS3404A is a high cell density trenched N-channel MOSFET designed for fast switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full functional reliability. Key features include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Device Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current VGS @ 10V 4.6 A
ID@TA=70 Continuous Drain Current VGS @ 10V 3.7 A
IDM Pulsed Drain Current 18.4 A
PD@TA=25 Total Power Dissipation 1 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 125 /W
RJC Thermal Resistance Junction-Case 80 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 V
RDS(ON),typ Static Drain-Source On-Resistance VGS=10V , ID=4A 27 33 m
RDS(ON),typ Static Drain-Source On-Resistance VGS=4.5V , ID=3A 36 50 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Qg Total Gate Charge VDS=15V , VGS=4.5V , ID=4A 5.0 6.9 nC
Qgs Gate-Source Charge 1.1 2.2
Qgd Gate-Drain Charge 2.6 2.8
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3, ID=4A 2 4 ns
Tr Rise Time 34.4 62
Td(off) Turn-Off Delay Time 13.2 26
Tf Fall Time 4.8 9.6
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 420 582 pF
Coss Output Capacitance 60 87
Crss Reverse Transfer Capacitance 53 71
IS Continuous Source Current VG=VD=0V , Force Current 4.6 A
ISM Pulsed Source Current 18.4 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 1.2 V
trr Reverse Recovery Time IF =4A , dI/dt=100A/s , TJ=25 8.7 nS
Qrr Reverse Recovery Charge 2.3 nC
Part Number Package Code Packaging
HSS3404A SOT-23 3000/Tape&Reel

2410121655_HUASHUO-HSS3404A_C518794.pdf

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