Power MOSFET HUASHUO HSBA6040 N Channel Trenched Device for Synchronous Buck Converter Applications
Key Attributes
Model Number:
HSBA6040
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
116A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
245pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4.706nF@15V
Pd - Power Dissipation:
113W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HSBA6040
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6040 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS (implied by website domain www.hs-semi.cn)
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 116 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 74 | A | |||
| IDM | Pulsed Drain Current2 | 250 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 125 | mJ | |||
| IAS | Avalanche Current | 50 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 113 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.1 | /W | ||
| Product Summary | ||||||
| Model | ||||||
| HSBA6040 | ||||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 4.3 | 5.2 | m | |
| VGS=4.5V , ID=20A | 6 | 7 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=10V , ID=30A | 75 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 0.7 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=48V , VGS=10V , ID=25A | 75 | --- | nC | |
| Qgs | Gate-Source Charge | 15.5 | --- | |||
| Qgd | Gate-Drain Charge | 20.3 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=30A | 18.5 | --- | ns | |
| Tr | Rise Time | 8.8 | --- | |||
| Td(off) | Turn-Off Delay Time | 58.8 | --- | |||
| Tf | Fall Time | 15.8 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 4706 | --- | pF | |
| Coss | Output Capacitance | 325 | --- | |||
| Crss | Reverse Transfer Capacitance | 245 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 116 | A | |
| ISM | Pulsed Source Current2,5 | --- | 250 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/µs , TJ=25 | 22.9 | --- | nS | |
| Qrr | Reverse Recovery Charge | 11.6 | --- | nC | ||
2409291134_HUASHUO-HSBA6040_C508831.pdf
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