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quality P channel MOSFET HUASHUO HSU4113 40V featuring fast switching and low conduction losses for power management factory
quality P channel MOSFET HUASHUO HSU4113 40V featuring fast switching and low conduction losses for power management factory

P channel MOSFET HUASHUO HSU4113 40V featuring fast switching and low conduction losses for power management

Key Attributes
Model Number: HSU4113
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
40mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.004nF@15V
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
HSU4113
Package:
TO-252-2
Product Description

Product Overview

The HSU4113 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 40V
  • Switching Speed: Fast
  • Technology: High Cell Density Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage ±20 ±20 V
ID@TC=25 Continuous Drain Current, -VGS @ -10V1 -23 A
ID@TC=100 Continuous Drain Current, -VGS @ -10V1 -18 A
IDM Pulsed Drain Current2 -46 A
EAS Single Pulse Avalanche Energy3 37 mJ
IAS Avalanche Current -27.2 A
PD@TC=25 Total Power Dissipation4 31.3 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 4 /W
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA --- -0.012 --- V/
RDS(ON),max Static Drain-Source On-Resistance2 VGS=-10V , ID=-18A --- --- 40 m
RDS(ON),max Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-12A --- --- 65 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
VGS(th) VGS(th) Temperature Coefficient --- 4.32 --- mV/
IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-18A --- 12.6 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 ---
Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-12A --- 9 --- nC
Qgs Gate-Source Charge --- 2.54 --- nC
Qgd Gate-Drain Charge --- 3.1 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-1A --- 19.2 --- ns
Tr Rise Time --- 12.8 --- ns
Td(off) Turn-Off Delay Time --- 48.6 --- ns
Tf Fall Time --- 4.6 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1004 --- pF
Coss Output Capacitance --- 108 --- pF
Crss Reverse Transfer Capacitance --- 80 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -23 A
ISM Pulsed Source Current2,5 --- --- -46 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- --- -1 V
Ordering Information
Part Number Package code Packaging
HSU4113 TO252-2 2500/Tape&Reel

2410121456_HUASHUO-HSU4113_C701017.pdf
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