HXY MOSFET SI7848BDP T1 E3 HXY N Channel MOSFET with Low RDS ON and High Current Handling Capability
Key Attributes
Model Number:
SI7848BDP-T1-E3-HXY
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
87pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
72.3W
Input Capacitance(Ciss):
1.278nF@25V
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
SI7848BDP-T1-E3-HXY
Package:
DFN-8(5x6)
Product Description
Product Overview
The SI7848BDP-T1-E3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is ideal for battery protection and general switching applications, including uninterruptible power supplies.
Product Attributes
- Brand: HXY (HUAXUANYANG HXY ELECTRONICS CO.,LTD)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package Marking: SI7848BDP-T1-E3
- Ordering Information: DFN5X6-8L
- Quantity: 5000 PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 55 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 41 | A | |||
| IDM | Pulsed Drain Current | 280 | A | |||
| EAS | Single Pulse Avalanche Energy | 76 | mJ | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=15A | 6.5 | 8.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=8A | 9 | 12 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | V | ||
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.0 | |||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=10A | 19.7 | nC | ||
| Qgs | Gate-Source Charge | 2.8 | nC | |||
| Qgd | Gate-Drain Charge | 5.1 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 13.2 | ns | ||
| Tr | Rise Time | 2.2 | ns | |||
| Td(off) | Turn-Off Delay Time | 72 | ns | |||
| Tf | Fall Time | 4.5 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 6000 | pF | ||
| Coss | Output Capacitance | 1509 | pF | |||
| Crss | Reverse Transfer Capacitance | 129 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 140 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.8 | 2.5 | V |
2509181716_HXY-MOSFET-SI7848BDP-T1-E3-HXY_C22366797.pdf
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