power switching P channel MOSFET HUASHUO HSS2301C with trench technology and low gate charge design
Key Attributes
Model Number:
HSS2301C
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
300mV
Reverse Transfer Capacitance (Crss@Vds):
44pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
270pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
HSS2301C
Package:
SOT-23
Product Description
Product Overview
The HSS2301C is a P-channel, 20V fast switching MOSFET utilizing high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VDS | Drain-Source Voltage | -20 | V | ||||
| VGS | Gate-Source Voltage | 12 | V | ||||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -2 | A | ||||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -1.4 | A | ||||
| IDM | Pulsed Drain Current2 | -8 | A | ||||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Data | |||||||
| RJA | Thermal Resistance Junction-ambient1 | 145 | /W | ||||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | |||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | 130 | 150 | m | ||
| VGS=-2.5V , ID=-1A | 170 | 190 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -0.65 | -1.0 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | |||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | |||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | |||
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 5 | S | |||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-2A | 4.3 | nC | |||
| Qgs | Gate-Source Charge | 0.7 | nC | ||||
| Qgd | Gate-Drain Charge | 1 | nC | ||||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-2A | 12 | ns | |||
| 20 | ns | ||||||
| Td(off) | Turn-Off Delay Time | 23 | ns | ||||
| 9 | ns | ||||||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 270 | pF | |||
| Coss | Output Capacitance | 54 | pF | ||||
| Crss | Reverse Transfer Capacitance | 44 | pF | ||||
| Diode Characteristics | |||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -2 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS2301C | SOT-23 | 3000/Tape&Reel |
2409272232_HUASHUO-HSS2301C_C518801.pdf
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