Low Gate Charge N Channel and P Channel Fast Switching MOSFETs HUASHUO HSU0903 for Power Applications
Key Attributes
Model Number:
HSU0903
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
255mΩ@4.5V,1.6A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
24pF@30V;29pF@30V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
66pF@30V;1.229nF@30V
Gate Charge(Qg):
15nC@4.5V;19nC@10V
Mfr. Part #:
HSU0903
Package:
TO-252-4
Product Description
Product Overview
The HSU0903 series offers N-Channel and P-Channel Fast Switching MOSFETs designed for efficient power management and DC motor control applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and are available as Green Devices. They utilize advanced high cell density Trench technology, providing excellent CdV/dt effect decline for robust performance.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
| HSU0903 N-Ch and P-Ch Fast Switching MOSFETs | |||||
|---|---|---|---|---|---|
| Parameter | N-Channel Rating | P-Channel Rating | Units | ||
| Drain-Source Voltage (VDS) | 100 | -100 | V | ||
| Gate-Source Voltage (VGS) | 20 | 20 | V | ||
| Continuous Drain Current, VGS @ 10V (TA=25) | 2.6 | -1.8 | A | ||
| Continuous Drain Current, VGS @ 10V (TA=100) | 1.6 | -1.1 | A | ||
| Continuous Drain Current, VGS @ 10V (TC=25) | 8 | -6.2 | A | ||
| Continuous Drain Current, VGS @ 10V (TC=100) | 4.4 | -3.9 | A | ||
| Pulsed Drain Current (IDM) | 25 | -25 | A | ||
| Single Pulse Avalanche Energy (EAS) | 25 | 49 | mJ | ||
| Avalanche Current (IAS) | 10 | -14 | A | ||
| Total Power Dissipation (PD@TA=25) | 1.5 | 1.5 | W | ||
| Storage Temperature Range (TSTG) | -55 to 150 | -55 to 150 | |||
| Operating Junction Temperature Range (TJ) | -55 to 150 | -55 to 150 | |||
| Parameter | Conditions | Typ. | Max. | Units | |
| Thermal Resistance Junction-Ambient (RJA) | N-Channel | --- | 85 | /W | |
| P-Channel | --- | 85 | /W | ||
| Thermal Resistance Junction-Case (RJC) | N-Channel | --- | 7 | /W | |
| P-Channel | --- | 7 | /W | ||
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage (BVDSS) | N-Channel (VGS=0V , ID=250uA) | 100 | --- | --- | V |
| P-Channel (VGS=0V , ID=-250uA) | -100 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | N-Channel (VGS=10V , ID=2.5A) | --- | 80 | 100 | m |
| P-Channel (VGS=-10V , ID=-2A) | --- | 180 | 220 | m | |
| Gate Threshold Voltage (VGS(th)) | N-Channel (VGS=VDS , ID =250uA) | 1.2 | --- | 2.5 | V |
| P-Channel (VGS=VDS , ID =-250uA) | -1.2 | --- | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | N-Channel (VDS=80V , VGS=0V , TJ=25) | --- | --- | 1 | uA |
| P-Channel (VDS=-80V , VGS=0V , TJ=25) | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | N-Channel (VGS=20V , VDS=0V) | --- | --- | 100 | nA |
| P-Channel (VGS=20V , VDS=0V) | --- | --- | 100 | nA | |
| Gate Resistance (Rg) | (VDS=0V , VGS=0V , f=1MHz) | --- | 3.5 | --- | |
| Total Gate Charge (Qg) | N-Channel (VDS=50V , VGS=4.5V , ID=2A) | --- | 15 | --- | nC |
| P-Channel (VDS=-50V , VGS=-10V , ID=-2A) | --- | 19 | --- | nC | |
| Continuous Source Current (IS) | N-Channel (VG=VD=0V , Force Current) | --- | --- | 12 | A |
| P-Channel (VG=VD=0V , Force Current) | --- | --- | -10 | A | |
| Diode Forward Voltage (VSD) | N-Channel (VGS=0V , IS=1A , TJ=25) | --- | --- | 1.2 | V |
| P-Channel (VGS=0V , IS=-1A , TJ=25) | --- | --- | -1.2 | V | |
Applications
- Power Management
- DC Motor Control
2410121655_HUASHUO-HSU0903_C5341702.pdf
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