Dual P Channel Enhancement Mode MOSFET HXY MOSFET AO4805 HXY with Low RDS ON and High Current Rating
Key Attributes
Model Number:
AO4805-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
158pF@15V
Number:
2 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.345nF@15V
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
AO4805-HXY
Package:
SOP-8
Product Description
Product Overview
The AO4805-HXY is a Dual P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications, particularly PWM applications. Key features include a VDS of -30V and an ID of -8.5A, with RDS(ON) as low as 18m at VGS=-10V and 28m at VGS=-4.5V.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: AO4805-HXY
- Origin: Shenzhen, China
- Package: SOP-8 (SOIC-8)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| General Features | |||||
| VDS | Drain-Source Voltage | -30 | V | ||
| ID | Continuous Drain Current | -8.5 | A | ||
| RDS(ON) | @ VGS=-10V | 18 | m | ||
| RDS(ON) | @ VGS=-4.5V | 28 | m | ||
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID | Drain Current-Continuous | -8.5 | A | ||
| IDM | Drain Current-Pulsed (Note 1) | -26 | A | ||
| PD | Maximum Power Dissipation | 1.5 | W | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 2) | 85 | /W | ||
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=-250uA) | -30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient (Reference to 25 , ID=-1mA) | -0.022 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-10V , ID=-6A) | 18 | |||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-4.5V , ID=-4A) | 28 | |||
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =-250uA) | -1.0 | -2.5 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 4.6 | mV/ | ||
| IDSS | Drain-Source Leakage Current (VDS=-24V , VGS=0V , TJ=25) | -1 | uA | ||
| IDSS | Drain-Source Leakage Current (VDS=-24V , VGS=0V , TJ=55) | -5 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V , VDS=0V) | 100 | nA | ||
| gfs | Forward Transconductance (VDS=-5V , ID=-6A) | 17 | S | ||
| Rg | Gate Resistance (VDS=0V , VGS=0V , f=1MHz) | 13 | |||
| Qg | Total Gate Charge (-4.5V) (VDS=-15V , VGS=-4.5V , ID=-6A) | 12.6 | nC | ||
| Qgs | Gate-Source Charge | 4.8 | |||
| Qgd | Gate-Drain Charge | 4.8 | |||
| Td(on) | Turn-On Delay Time (VDD=-15V , VGS=-10V , RG=3.3, ID=-6A) | 4.6 | ns | ||
| Tr | Rise Time | 14.8 | ns | ||
| Td(off) | Turn-Off Delay Time | 41 | ns | ||
| Tf | Fall Time | 19.6 | ns | ||
| Ciss | Input Capacitance (VDS=-15V , VGS=0V , f=1MHz) | 1345 | pF | ||
| Coss | Output Capacitance | 194 | pF | ||
| Crss | Reverse Transfer Capacitance | 158 | pF | ||
| Diode Characteristics | |||||
| IS | Continuous Source Current (VG=VD=0V , Force Current) | -6.5 | A | ||
| ISM | Pulsed Source Current | -26 | A | ||
| VSD | Diode Forward Voltage (VGS=0V , IS=-1A , TJ=25) | -1.2 | V | ||
| trr | Reverse Recovery Time (IF=-6A , dI/dt=100A/s , TJ=25) | 16.3 | nS | ||
| Qrr | Reverse Recovery Charge | 5.9 | nC | ||
2509181601_HXY-MOSFET-AO4805-HXY_C4748737.pdf
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