Power Switching MOSFET HUAYI HYG053N10NS1P Featuring 100V Voltage and Low RDS ON for Inverter Systems
Key Attributes
Model Number:
HYG053N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 N-channel
Output Capacitance(Coss):
1.41nF
Input Capacitance(Ciss):
4.036nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
-
Mfr. Part #:
HYG053N10NS1P
Package:
TO-220FB
Product Description
Product Overview
The HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low RDS(ON) of 4.8 m (typ.) at VGS = 10V and a continuous drain current of 100V/120A. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant). It is suitable for power management in inverter systems and battery management applications.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Avalanche Energy (mJ) |
| HYG053N10NS1P/B | TO-220FB-3L | 100 | 120 | 4.8 (typ.) | 360 |
| HYG053N10NS1P/B | TO-263-2L | 100 | 120 | 4.8 (typ.) | 360 |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=50A | - | 4.8 | 5.5 | m |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.9 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | - | 60 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 106 | - | nC |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4036 | - | pF |
| Output Capacitance (Coss) | - | - | 1410 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 76 | - | pF |
| Total Gate Charge (Qg) | VDS =80V, VGS=10V,IDs=50A | - | 70 | - | nC |
2410121242_HUAYI-HYG053N10NS1P_C2844409.pdf
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