High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions
Key Attributes
Model Number:
HSD6016
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
47A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,47A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
146pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.24nF@15V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
28.7nC@4.5V
Mfr. Part #:
HSD6016
Package:
TO-251
Product Description
Product Overview
The HSD6016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approved, making it suitable for demanding industrial applications.Product Attributes
- Brand: HSD
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 47 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| IDM | Pulsed Drain Current2 | 100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 72.2 | mJ | |||
| IAS | Avalanche Current | 38 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.052 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | --- | 12 | m |
| VGS=4.5V , ID=15A | --- | --- | 15 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -5.76 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 42 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=15A | --- | 28.7 | --- | nC |
| Qgs | Gate-Source Charge | --- | 10.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 9.9 | --- | ||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=15A | --- | 10.4 | --- | ns |
| tr | Rise Time | --- | 9.2 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 63 | --- | ||
| tf | Fall Time | --- | 4.8 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 3240 | --- | pF |
| Coss | Output Capacitance | --- | 210 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 146 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 47 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 100 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/µs , TJ=25 | --- | 18 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 14 | --- | nC | |
2410121503_HUASHUO-HSD6016_C508803.pdf
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