N Channel MOSFET HUAYI HY5110W 100V 316A Low On Resistance for Power Electronics
Key Attributes
Model Number:
HY5110W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
316A
Operating Temperature -:
-
RDS(on):
2.5mΩ@10V,158A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
850pF
Number:
1 N-channel
Input Capacitance(Ciss):
16.465nF
Output Capacitance(Coss):
1.558nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
356nC@10V
Mfr. Part #:
HY5110W
Package:
TO-247A-3L
Product Description
Product Overview
The HY5110W/A is a 2.1 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/316A rating, low on-resistance (RDS(ON)=2.1m typ. @ VGS=10V), and is avalanche rated for reliability. Available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HOOYI
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate termination finish (for lead-free products)
- Package Types: TO-247-3L, TO-3P-3L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | TO-247-3L | TO-3P-3L |
| Absolute Maximum Ratings | ||||||||
| VDSS | Drain-Source Voltage | 100 | V | ✔ | ✔ | |||
| VGSS | Gate-Source Voltage | ±25 | V | ✔ | ✔ | |||
| TJ | Maximum Junction Temperature | -55 | 175 | °C | ✔ | ✔ | ||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ✔ | ✔ | ||
| ID | Continuous Drain Current | TC=25°C, Mounted on Large Heat Sink | 316 | A | ✔ | ✔ | ||
| ID | Continuous Drain Current | TC=100°C | 214 | A | ✔ | ✔ | ||
| IDM | Pulsed Drain Current | TC=25°C | 850 | A | ✔ | ✔ | ||
| PD | Maximum Power Dissipation | TC=25°C | 500 | W | ✔ | ✔ | ||
| PD | Maximum Power Dissipation | TC=100°C | 250 | W | ✔ | ✔ | ||
| RθJC | Thermal Resistance-Junction to Case | 0.3 | °C/W | ✔ | ✔ | |||
| RθJA | Thermal Resistance-Junction to Ambient | 40 | °C/W | ✔ | ✔ | |||
| EAS | Avalanche Energy, Single Pulsed | L=0.5mH | 49 | mJ | ✔ | ✔ | ||
| Electrical Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 100 | V | ✔ | ✔ | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=100V, VGS=0V | 1 | µA | ✔ | ✔ | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | 10 | µA | ✔ | ✔ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2 | 3 | 4 | V | ✔ | ✔ |
| IGSS | Gate Leakage Current | VGS=±25V, VDS=0V | ±100 | nA | ✔ | ✔ | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=158A | 2.1 | 2.5 | mΩ | ✔ | ✔ | |
| VSD | Diode Forward Voltage | ISD=158A, VGS=0V | 0.8 | 1.3 | V | ✔ | ✔ | |
| trr | Reverse Recovery Time | 74 | ns | ✔ | ✔ | |||
| Qrr | Reverse Recovery Charge | ISD=158A, dlSD/dt=100A/µs | 138 | nC | ✔ | ✔ | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 0.5 | Ω | ✔ | ✔ | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 16465 | pF | ✔ | ✔ | ||
| Coss | Output Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 1558 | pF | ✔ | ✔ | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | 100 | pF | ✔ | ✔ | ||
| td(ON) | Turn-on Delay Time | VDD=50V, R G=6 Ω, IDS=158A, VGS=10V | 58 | ns | ✔ | ✔ | ||
| Tr | Turn-on Rise Time | VDD=50V, R G=6 Ω, IDS=158A, VGS=10V | 90 | ns | ✔ | ✔ | ||
| td(OFF) | Turn-off Delay Time | VDD=50V, R G=6 Ω, IDS=158A, VGS=10V | 120 | ns | ✔ | ✔ | ||
| Tf | Turn-off Fall Time | VDD=50V, R G=6 Ω, IDS=158A, VGS=10V | 74 | ns | ✔ | ✔ | ||
| Qg | Total Gate Charge | VDS=80V, VGS=10V, IDS=158A | 356 | nC | ✔ | ✔ | ||
| Qgs | Gate-Source Charge | VDS=80V, VGS=10V, IDS=158A | 50 | nC | ✔ | ✔ | ||
| Qgd | Gate-Drain Charge | VDS=80V, VGS=10V, IDS=158A | 129 | nC | ✔ | ✔ | ||
2411220203_HUAYI-HY5110W_C128014.pdf
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