SiC Power MOSFET HXY MOSFET DMWS120H100SM4-HXY 1200V 32A N Channel Enhancement Mode Device
Key Attributes
Model Number:
DMWS120H100SM4-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-40℃~+175℃
RDS(on):
90mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
2pF
Pd - Power Dissipation:
136W
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
1.39nF
Gate Charge(Qg):
53nC
Mfr. Part #:
DMWS120H100SM4-HXY
Package:
TO-247-4L
Product Description
Product Overview
This 3rd generation SiC Power MOSFET, the DMWS120H100SM4 from HUAXUANYANG ELECTRONICS CO.,LTD, offers high performance with a 1200V drain-source voltage and low on-resistance. It features high-speed switching capabilities, a fast intrinsic diode with low reverse recovery, and an optimized package with a separate driver source pin for improved system efficiency and power density. Applications include renewable energy systems, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: DMWS120H100SM4
- Material: SiC (Silicon Carbide)
- Technology: N-Channel Enhancement Mode
- Package: TO-247H-4L
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|
| Drain - Source Voltage (VDSmax) | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate - Source Voltage (VGSmax, dynamic) | -8/+19 | V | AC (f >1 Hz) | Note: 1 |
| Gate - Source Voltage (VGSop, static) | -4/+15 | V | Static | Note: 2 |
| Continuous Drain Current (ID) | 32 | A | VGS = 15 V, TC = 25C | Fig. 19 |
| Pulsed Drain Current (ID(pulse)) | 80 | A | Pulse width tP limited by Tjmax | Fig. 22 |
| Power Dissipation (PD) | 136 | W | TC=25C, TJ = 175 C | Fig. 20 |
| Operating Junction and Storage Temperature (TJ, Tstg) | -40 to +175 | C | ||
| Solder Temperature (TL) | 260 | C | 1.6mm (0.063) from case for 10s | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 1200 | V | VGS = 0 V, ID = 100 A | |
| Gate Threshold Voltage (VGS(th)) | 1.8 / 2.5 / 3.6 | V | VDS = VGS, ID = 5 mA | Fig. 11 |
| Zero Gate Voltage Drain Current (IDSS) | 1 / 50 | A | VDS = 1200 V, VGS = 0 V | |
| Gate-Source Leakage Current (IGSS) | 10 / 250 | nA | VGS = 15 V, VDS = 0 V | |
| Drain-Source On-State Resistance (RDS(on)) | 75 / 90 | m | VGS = 15 V, ID = 20 A | Fig. 4, 5, 6 |
| Transconductance (gfs) | 12 / 13 | S | VDS= 20 V, IDS= 20 A | Fig. 7 |
| Input Capacitance (Ciss) | 1390 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Output Capacitance (Coss) | 58 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Reverse Transfer Capacitance (Crss) | 2 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 |
| Stored Energy (Eoss) | 33 | J | Fig. 16 | |
| Turn-On Switching Energy (EON) | 270 | J | VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0 , L= 156 H, TJ = 150C | Fig. 26, 29 |
| Turn-Off Switching Energy (EOFF) | 77 | J | VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0 , L= 156 H, TJ = 150C | Fig. 26, 29 |
| Turn-On Delay Time (td(on)) | 30 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Rise Time (tr) | 14 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Turn-Off Delay Time (td(off)) | 38 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Fall Time (tf) | 10 | ns | VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDSInductive load | Fig. 27, 28 |
| Internal Gate Resistance (RG(int)) | 9.0 | f = 1 MHz, VAC = 25 mV | ||
| Gate to Source Charge (Qgs) | 17 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Gate to Drain Charge (Qgd) | 18 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Total Gate Charge (Qg) | 53 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 20 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Diode Forward Voltage (VSD) | 4.5 / 4.0 | V | VGS = -4 V, ISD = 10 A | Fig. 8, 9, 10 |
| Continuous Diode Forward Current (IS) | 26 | A | VGS = -4 V, TJ = 25 C | Note 1 |
| Diode pulse Current (IS, pulse) | 80 | A | VGS = -4 V, pulse width tP limited by Tjmax | Note 1 |
| Reverse Recover time (trr) | 20 | ns | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Reverse Recovery Charge (Qrr) | 254 | nC | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Peak Reverse Recovery Current (Irrm) | 18 | A | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 |
| Thermal Resistance Junction to Case (RJC) | 1.1 | C/W | Fig. 21 | |
| Thermal Resistance Junction to Ambient (RJA) | 40 | C/W |
2509181735_HXY-MOSFET-DMWS120H100SM4-HXY_C48972196.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
