Fast Switching MOSFET HUASHUO HSH100N15 N Channel with 150V Drain Source Voltage and 7.3 Milliohm RDS
Product Overview
The HSH100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage, a continuous drain current of up to 100A, and a low on-resistance (RDS(ON)) of typically 7.3m. This MOSFET utilizes advanced high cell density Trench technology, offering super low RDS(ON) and guaranteed 100% EAS. It is suitable for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. Available as a Green Device.
Product Attributes
- Brand: HSH
- Type: N-Channel MOSFET
- Technology: Fast Switching, Trench Technology
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 63 | A | |||
| IDM | Pulsed Drain Current2 | 400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 785 | mJ | |||
| IAS | Avalanche Current | 56 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 178 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 50 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.7 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 7.3 | 9 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=125 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.9 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=75V , VGS=10V , ID=20A | 100 | --- | nC | |
| Qgs | Gate-Source Charge | 25 | --- | |||
| Qgd | Gate-Drain Charge | 31 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=1A | 32 | --- | ns | |
| Tr | Rise Time | 25 | --- | |||
| Td(off) | Turn-Off Delay Time | 98 | --- | |||
| Tf | Fall Time | 89 | --- | |||
| Ciss | Input Capacitance | VDS=75V , VGS=0V , f=1MHz | 5880 | --- | pF | |
| Coss | Output Capacitance | 401 | --- | |||
| Crss | Reverse Transfer Capacitance | 9.5 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 100 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=50V, VGS=10V, L=0.5mH, IAS=56A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Package limitation current.
2410121642_HUASHUO-HSH100N15_C5341707.pdf
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