Single N Channel MOSFET HUAYI HYG038N03LR1D Featuring Low RDS ON and Avalanche Tested for Battery Protection
Key Attributes
Model Number:
HYG038N03LR1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
78A
RDS(on):
6.3mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Output Capacitance(Coss):
213pF
Pd - Power Dissipation:
47W
Input Capacitance(Ciss):
1.466nF
Gate Charge(Qg):
35.5nC@10V
Mfr. Part #:
HYG038N03LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG038N03LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low RDS(ON) of 3.5 m (typ.) at VGS = 10V and 4.9 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Package Type: TO-252-2L
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | - | - | 30 | V | |
| Gate-Source Voltage (VGSS) | - | - | 20 | V | |
| Junction Temperature Range (TJ) | -55 | - | 175 | ||
| Storage Temperature Range (TSTG) | -55 | - | 175 | ||
| Source Current-Continuous (IS) | Tc=25, Mounted on Large Heat Sink | - | - | 78 | A |
| Pulsed Drain Current (IDM) | Tc=25 | - | - | 260 | A |
| Continuous Drain Current (ID) | Tc=25 | - | - | 78 | A |
| Continuous Drain Current (ID) | Tc=100 | - | - | 55 | A |
| Maximum Power Dissipation (PD) | Tc=25 | - | - | 47 | W |
| Maximum Power Dissipation (PD) | Tc=100 | - | - | 23.5 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | 3.2 | - | /W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | - | 60.0 | - | /W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | - | 122 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125 | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.0 | 1.8 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | - | 3.5 | 4.2 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | - | 4.9 | 6.3 | m |
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | - | 0.83 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | - | 12 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 5 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 2.3 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1466 | - | pF |
| Output Capacitance (Coss) | - | 213 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 176 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=4, IDS=20A,VGS=10V | - | 8 | - | ns |
| Turn-on Rise Time (Tr) | - | 51 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 37 | - | ns | |
| Turn-off Fall Time (Tf) | - | 54 | - | ns | |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, ID=20A | - | 35.5 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V | - | 18.9 | - | nC |
| Gate-Source Charge (Qgs) | - | 5.5 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 10.9 | - | nC | |
2410122028_HUAYI-HYG038N03LR1D_C3721022.pdf
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