3rd Generation SiC MOSFET HXY MOSFET NTHL045N065SC1-HXY with High System Efficiency and Fast Switching
Key Attributes
Model Number:
NTHL045N065SC1-HXY
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
Operating Temperature -:
-55℃~+175℃
RDS(on):
49mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Mfr. Part #:
NTHL045N065SC1-HXY
Package:
TO-247
Product Description
Product Overview
The HUAXUANYANG NTHL045N065SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device featuring 3rd generation SiC MOSFET technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. The optimized package includes a separate driver source pin. Benefits include reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency.
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen, China
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Features | ||||
| 3rd generation SiC MOSFET technology | ||||
| Optimized package with separate driver source pin | ||||
| High blocking voltage with low on-resistance | ||||
| High-speed switching with low capacitances | ||||
| Fast intrinsic diode with low reverse recovery (Qrr) | ||||
| Halogen free, RoHS compliant | ||||
| Benefits | ||||
| Reduce switching losses and minimize gate ringing | ||||
| Higher system effciency | ||||
| Reduce cooling requirements | ||||
| Increase power density | ||||
| Increase system switching frequency | ||||
| Applications | ||||
| Renewable energy | ||||
| EV battery chargers | ||||
| High voltage DC/DC converters | ||||
| Switch Mode Power Supplies | ||||
| Maximum Ratings | ||||
| Drain-source voltage | VDS | 650 | V | TC = 25 C unless otherwise specified |
| Continuous drain current | ID | 123 | A | TC = 25C |
| Continuous drain current | ID | 35 | A | TC = 100C |
| Pulsed drain current | ID pulse | 242 | A | (TC = 25C, tp limited by Tjmax) |
| Gate-Source voltage | VGS | -5/+20 | V | |
| Power dissipation | Ptot | 1000 | W | (TC = 25C) |
| Operating junction and storage temperature | Tj , Tstg | -55...+175 | C | |
| Avalanche energy, single pulse | EAS | 49 | mJ | (L=10mH) |
| Gate-Source voltagedynamic,Absolute maximum values | VGSmax | -10/+25 | V | |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | 0.62 | C/W | |
| Thermal resistance, junction ambient. Max | RthJA | 30 | C/W | |
| Static Characteristic | ||||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID = 250uA |
| Gate threshold voltage | VGS(th ) | 19 | V | VDS=VGS,ID=7mA |
| Drain-source on-state resistance | RDS(on) | 45 | m | VGS=20V, ID=17.6A, Tj=25C |
| Drain-source on-state resistance | RDS(on) | 49 | m | VGS=20V, ID=17.6A, Tj=175C |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=650V,VGS=0V, Tj=25C |
| Zero gate voltage drain current | IDSS | 25 | A | VDS=650V,VGS=0V, Tj=175C |
| Gate-source leakage current | IGSS | 10 | nA | VGS=20V |
| Transconductance | gfs | 19 | S | VDS=20V,ID =17.6A |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | 1823 | pF | VDS = 650V, VGS = 0V, f=1MHz |
| Output Capacitance | Coss | 156 | pF | VDS = 650V, VGS = 0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS = 650V, VGS = 0V, f=1MHz |
| Gate Total Charge | QG | 156 | nC | VGS=20V, VDS=400V, ID=17.6A |
| Gate-Drain charge | Qgd | 40 | nC | VGS=20V, VDS=400V, ID=17.6A |
| Gate-Source charge | Qgs | 25 | nC | VGS=20V, VDS=400V, ID=17.6A |
| Turn-on delay time | td(on) | 19 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Rise time | tr | 26 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Turn-off delay time | td(off) | 48 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Fall time | tf | 15 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Turn-On Switching Energy | EON | 1.7 | J | VGS=20V, VDS=400V, ID=17.6A, RG=10 |
| Turn-Off Switching Energy | EOFF | 3.2 | J | VGS=20V, VDS=400V, ID=17.6A, RG=10 |
| Body Diode Characteristic | ||||
| Body Diode Forward Voltage | VSD | 2.6 | V | VGS=0V,ISD=8.8A, TJ=25C |
| Body Diode Forward Voltage | VSD | 3.2 | V | VGS=0V,ISD=8.8A, TJ=175C |
| Body Diode Reverse Recovery Time | trr | 15 | ns | VR = 400V, ID = 17.6A, di/dt = 1000A/S |
| Body Diode Reverse Recovery Charge | Qrr | 40 | nC | VR = 400V, ID = 17.6A, di/dt = 1000A/S |
2509181735_HXY-MOSFET-NTHL045N065SC1-HXY_C48972194.pdf
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