Power tool MOSFET with 60V 210A rating HUAYI HYG019N06LS1C2 single N Channel enhancement mode device
Key Attributes
Model Number:
HYG019N06LS1C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
210A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.6mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40.4pF
Number:
1 N-channel
Output Capacitance(Coss):
1.15nF
Input Capacitance(Ciss):
5.044nF
Pd - Power Dissipation:
166.6W
Gate Charge(Qg):
79.2nC@10V
Mfr. Part #:
HYG019N06LS1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG019N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a robust and reliable performance with features such as 60V/210A rating, low RDS(ON) of 1.6 m (typ.) at VGS = 10V, and 100% avalanche tested. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: HYG (Huayi)
- Origin: China
- Material: Halogen-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Product | Feature | Rating | Unit | Test Conditions | |
| HYG019N06LS1C2 | Absolute Maximum Ratings | ||||
| Drain-Source Voltage (VDSS) | 60 | V | Tc=25C Unless Otherwise Noted | ||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | 175 | C | |||
| Storage Temperature Range (TSTG) | -55 to 175 | C | |||
| Continuous Drain Current (ID) | 210 | A | Tc=25C | ||
| Continuous Drain Current (ID) | 148.5 | A | Tc=100C | ||
| Pulsed Drain Current (IDM) | 720 | A | Tc=25C, Pulse width limited by max.junction temperature | ||
| Maximum Power Dissipation (PD) | 166.6 | W | Tc=25C | ||
| Maximum Power Dissipation (PD) | 83.3 | W | Tc=100C | ||
| Thermal Resistance, Junction-to-Case (RJC) | 0.9 | C/W | Mounted on Large Heat Sink | ||
| Thermal Resistance, Junction-to-Ambient (RJA) | 47 | C/W | Surface mounted on FR-4 board | ||
| Single Pulsed Avalanche Energy (EAS) | 702.2 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25C | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | 60 | V | VGS=0V, IDS=250A | ||
| Gate Threshold Voltage (VGS(th)) | 1.5 - 3.0 | V | VDS=VGS, IDS=250A | ||
| Drain-Source On-State Resistance (RDS(ON)) | 1.6 - 2.2 | m | VGS=10V, IDS=50A | ||
| Diode Forward Voltage (VSD) | 0.83 - 1.2 | V | ISD=50A, VGS=0V | ||
| Input Capacitance (Ciss) | 5044 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | ||
| Output Capacitance (Coss) | 1150 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | ||
| Reverse Transfer Capacitance (Crss) | 40.4 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | ||
| Turn-on Delay Time (td(ON)) | 17.9 | ns | VDD=30V, RG=2.5, IDS=50A, VGS=10V | ||
| Turn-on Rise Time (Tr) | 59.9 | ns | VDD=30V, RG=2.5, IDS=50A, VGS=10V | ||
| Turn-off Delay Time (td(OFF)) | 41.2 | ns | VDD=30V, RG=2.5, IDS=50A, VGS=10V | ||
| Turn-off Fall Time (Tf) | 43.6 | ns | VDD=30V, RG=2.5, IDS=50A, VGS=10V | ||
| Total Gate Charge (Qg) | 79.2 | nC | VDS =48V, VGS=10V, ID=50A | ||
| Gate-Source Charge (Qgs) | 24.4 | nC | VDS =48V, VGS=10V, ID=50A | ||
| Gate-Drain Charge (Qgd) | 13.6 | nC | VDS =48V, VGS=10V, ID=50A | ||
2409302231_HUAYI-HYG019N06LS1C2_C7436878.pdf
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