Low On Resistance P Channel MOSFET HUAYI HYG110P04LQ2C2 Suitable for DC DC Converter Power Management
Key Attributes
Model Number:
HYG110P04LQ2C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Output Capacitance(Coss):
253pF
Input Capacitance(Ciss):
4.468nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
HYG110P04LQ2C2
Package:
PDFN-8(5.9x5.2)
Product Description
Product Overview
The HYG110P04LQ2C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 9.0 m (typ.) at VGS = -10V and 13.0 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | Tc=25C | -40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Maximum Junction Temperature | TJ | -55 | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | |||
| Source Current-Continuous(Body Diode) | IS | Tc=25C | -55 | A | |||
| Pulsed Drain Current | IDM | Tc=25C | -200 | A | |||
| Continuous Drain Current | ID | Tc=25C | -55 | A | |||
| Continuous Drain Current | ID | Tc=100C | -38.8 | A | |||
| Maximum Power Dissipation | PD | Tc=25C | 62.5 | W | |||
| Maximum Power Dissipation | PD | Tc=100C | 31.2 | W | |||
| Thermal Resistance, Junction-to-Case | RJC | 2.4 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | 45 | C/W | |||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C | 174 | mJ | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=-250A | -40 | V | |||
| Drain-to-Source Leakage Current | IDSS | VDS=-40V,VGS=0V | -1 | A | |||
| Drain-to-Source Leakage Current | IDSS | TJ=125C,VDS=-40V,VGS=0V | -50 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1.0 | -1.6 | -3.0 | V | |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, IDS = -20A | 9.0 | 11.5 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, IDS = -20A | 13.0 | 17.5 | m | ||
| Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | ISD=-10A,VGS=0V | -0.83 | -1.2 | V | ||
| Reverse Recovery Time | trr | ISD=-20A,dISD/dt=100A/s | 18.4 | ns | |||
| Reverse Recovery Charge | Qrr | ISD=-20A,dISD/dt=100A/s | 13.5 | nC | |||
| Dynamic Characteristics | |||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 4.5 | ||||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4468 | pF | |||
| Output Capacitance | Coss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 253 | pF | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 140 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 10.5 | ns | |||
| Turn-on Rise Time | Tr | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 48 | ns | |||
| Turn-off Delay Time | td(OFF) | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 83 | ns | |||
| Turn-off Fall Time | Tf | VDD=-20V,RG=2.5, IDS=-20A,VGS= -10V | 72 | ns | |||
| Gate Charge Characteristics | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS =-32V,ID=-20A | 76 | nC | |||
| Total Gate Charge | Qg | VGS=-4.5V, VDS =-32V,ID=-20A | 36 | nC | |||
| Gate-Source Charge | Qgs | VGS=-10V, VDS =-32V,ID=-20A | 15.9 | nC | |||
| Gate-Drain Charge | Qgd | VGS=-10V, VDS =-32V,ID=-20A | 14.2 | nC | |||
2410121313_HUAYI-HYG110P04LQ2C2_C2891580.pdf
Related Products
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
