HYG013N03LS1C2 N Channel Enhancement Mode MOSFET for Switching and Power Management in DC DC Systems
Key Attributes
Model Number:
HYG013N03LS1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.2pF
Number:
1 N-channel
Output Capacitance(Coss):
773pF
Input Capacitance(Ciss):
3.011nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
44.7nC@10V
Mfr. Part #:
HYG013N03LS1C2
Package:
PDFN5x6-8
Product Description
HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET
The HYG013N03LS1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are available, complying with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Part Number: HYG013N03LS1C2
- Package: PDFN5*6-8L
- Certifications: RoHS Compliant, Halogen-Free
- Material: Lead-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | - | - | 30 | V |
| Gate-Source Voltage | VGSS | Tc=25C | - | - | 20 | V |
| Maximum Junction Temperature | TJ | - | -55 | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | - | 150 | A |
| Pulsed Drain Current | IDM | Tc=25C | - | - | 540 | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 150 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 106 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 65 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 32 | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 2.3 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | - | 45 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C | - | 264 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125C, VDS=30V, VGS=0V | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 1.8 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, IDS=20A | - | 1.3 | 1.6 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, IDS=20A | - | 2.0 | 2.8 | m |
| Diode Forward Voltage | VSD | ISD=20A, VGS=0V | - | 0.77 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A, dISD/dt=100A/s | - | 31.2 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A, dISD/dt=100A/s | - | 23.7 | - | nC |
| Gate Resistance | RG | VGS=0V, VDS=0V, Frequency=1.0MHz | - | 0.78 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3011 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 773 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 9.2 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 12.7 | - | ns |
| Turn-on Rise Time | Tr | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 53.1 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 30.3 | - | ns |
| Turn-off Fall Time | Tf | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 11.2 | - | ns |
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=10V | - | 44.7 | - | nC |
| Total Gate Charge | Qg | VDS =24V, ID=20A, VGS=4.5V | - | 21.1 | - | nC |
| Gate-Source Charge | Qgs | VDS =24V, ID=20A, VGS=10V | - | 10.7 | - | nC |
| Gate-Drain Charge | Qgd | VDS =24V, ID=20A, VGS=10V | - | 7.1 | - | nC |
2410121313_HUAYI-HYG013N03LS1C2_C2763405.pdf
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