High current capacity HXY MOSFET IKY75N120CH3XKSA1-HXY insulated gate bipolar transistor in TO247P4L package
Key Attributes
Model Number:
IKY75N120CH3XKSA1-HXY
Product Custom Attributes
Td(off):
188ns
Pd - Power Dissipation:
930W
Td(on):
63ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
65pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@2.6mA
Gate Charge(Qg):
307nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
366ns
Switching Energy(Eoff):
3mJ
Turn-On Energy (Eon):
3.9mJ
Input Capacitance(Cies):
9.883nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
274pF
Mfr. Part #:
IKY75N120CH3XKSA1-HXY
Package:
TO-247P-4L
Product Description
Product Overview
The IKY75N120CH3XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features high current capability, low saturation voltage, and low switching losses, making it suitable for applications requiring high efficiency and rugged transient reliability. This IGBT is copacked with a Fast Recovery Diode and is designed for use in UPS, EV-Charging, String Solar Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IKY75N120CH3XKSA1
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P-4L
Technical Specifications
| Type | VCE | IC | VCEsat (Tvj=25C, IC=75A) | VF (Tvj=25C, IF=75A) | Package | Packing |
| IGBT | 1200V | 75A | 1.91V | 1.80V | TO-247P-4L | 30PCS |
| Parameter | Symbol | Conditions | Values | Unit |
| Collector emitter voltage | VCE | Tvj = 25 C | 1200 | V |
| DC collector current | IC | TC = 25 C | 100 | A |
| DC collector current | IC | TC = 100 C | 75 | A |
| Pulsed collector current | ICM | TC = 25 C | 300 | A |
| Maximum Diode forward current | IF | TC = 25 C | 100 | A |
| Maximum Diode forward current | IF | TC = 100 C | 75 | A |
| Diode pulsed current | IFM | TC = 25 C | 300 | A |
| Gate source voltage | VGE | Tvj = 25 C | 20 | V |
| Transient Gate-emitter Voltage | VGE | tp 10s, D < 0.010 | 25 | V |
| Power dissipation | Ptot | TC = 25 C | 930 | W |
| Power dissipation | Ptot | TC = 100 C | 460 | W |
| Operating junction temperature range | Tvj | -40 to +175 | C | |
| Storage temperature range | Tstg | -55 to +150 | C | |
| IGBT thermal resistance junction - case | RthJC | IGBT | 0.16 | K/W |
| Diode thermal resistance junction - case | RthJC | Diode | 0.33 | K/W |
| Thermal resistance junction - ambient | RthJA | 40 | K/W | |
| Collector-emitter voltage | V(BR)CES | Tvj = 25 C | 1200 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15 V, IC =75 A, Tvj = 25 C | 1.91 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15 V, IC =75 A, Tvj = 175 C | 2.79 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =75 A, Tvj = 25 C | 1.80 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =75 A, Tvj = 175 C | 1.62 | V |
| Gate-emitter threshold voltage | VGEth | VCE = VGE, IC = 2.6 mA, Tvj = 25 C | 5.1 - 6.6 | V |
| Zero gate voltage collector current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 40 | A |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V | 100 | nA |
| Input capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1MHz | 9883 | pF |
| Output capacitance | Coes | 274 | ||
| Reverse transfer capacitance | Cres | 65 | ||
| Gate input resistance | RG | f = 1MHz | 0.4 | |
| Gate charge | Qg | VCE = 600 V, IC = 75A, VGE = 0 V to 15 V | 307 | nC |
| Gate to emitter charge | Qge | 103 | ||
| Gate to collector charge | Qgc | 113 | ||
| Turn-on delay time | td(on) | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 63 | ns |
| Rise time | tr | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 29 | ns |
| Turn-off delay time | td(off) | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 188 | ns |
| Fall time | tf | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 96 | ns |
| Turn-on energy | Eon | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 3.9 | mJ |
| Turn-off energy | Eoff | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 3.0 | mJ |
| Total switching energy | Ets | Tvj = 25 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 6.9 | mJ |
| Turn-on delay time | td(on) | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 48 | ns |
| Rise time | tr | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 27 | ns |
| Turn-off delay time | td(off) | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 262 | ns |
| Fall time | tf | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 170 | ns |
| Turn-on energy | Eon | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 5.38 | mJ |
| Turn-off energy | Eoff | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 4.72 | mJ |
| Total switching energy | Ets | Tvj = 175 C; VCC = 600 V, IC = 75 A; VGE = 0 / 15 V; Rg(on) = 5.1 ; Rg(off) = 5.1 ; | 10.1 | mJ |
| Reverse recovery time | trr | Tvj = 25 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 366 | ns |
| Reverse recovery charge | Qrr | Tvj = 25 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 7.15 | C |
| Peak reverse recovery current | Irrm | Tvj = 25 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 57 | A |
| Reverse recovery energy | Erec | Tvj = 25 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 3.10 | mJ |
| Reverse recovery time | trr | Tvj = 175 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 511 | ns |
| Reverse recovery charge | Qrr | Tvj = 175 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 18.88 | C |
| Peak reverse recovery current | Irrm | Tvj = 175 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 122 | A |
| Reverse recovery energy | Erec | Tvj = 175 C; VR = 600 V, IF = 75 A; Rg(on) = 5.1 ; Rg(off) = 5.1 ; di/dt = 2600 A/us; | 8.44 | mJ |
2509181738_HXY-MOSFET-IKY75N120CH3XKSA1-HXY_C49003422.pdf
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