rugged design N Channel Enhancement Mode MOSFET HUAYI HYG055N08NS1C2 for switching and motor control
Key Attributes
Model Number:
HYG055N08NS1C2
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
85A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
1.54nF
Input Capacitance(Ciss):
3.66nF
Pd - Power Dissipation:
83.3W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG055N08NS1C2
Package:
PPAK5x6-8L
Product Description
HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET
The HYG055N08NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers low on-resistance (RDS(ON)=4.8 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available.
Product Attributes
- Brand: HYG
- Package: PPAK5*6-8L
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | - | - | 80 |
| Gate-Source Voltage | VGSS | Tc=25C Unless Otherwise Noted | V | - | - | ±20 |
| Junction Temperature Range | TJ | Tc=25C Unless Otherwise Noted | °C | -55 | - | 175 |
| Storage Temperature Range | TSTG | Tc=25C Unless Otherwise Noted | °C | -55 | - | 175 |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | A | - | - | 85 |
| Pulsed Drain Current | IDM | Tc=25°C | A | - | - | 400 |
| Continuous Drain Current | ID | Tc=25°C | A | - | - | 85 |
| Continuous Drain Current | ID | Tc=100°C | A | - | - | 60 |
| Maximum Power Dissipation | PD | Tc=25°C | W | - | - | 83.3 |
| Maximum Power Dissipation | PD | Tc=100°C | W | - | - | 41.7 |
| Thermal Resistance, Junction-to-Case | RθJC | Tc=25°C Unless Otherwise Noted | °C/W | - | 1.8 | - |
| Thermal Resistance, Junction-to-Ambient | RθJA | Tc=25°C Unless Otherwise Noted | °C/W | - | 45 | - |
| Single Pulsed Avalanche Energy | EAS | L=0.3mH, Starting TJ=25°C | mJ | - | - | 350*** |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS= 250μA | V | 80 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS= 80V,VGS=0V | μA | - | - | 1 |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | μA | - | - | 50 |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250μA | V | 2 | 3 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | nA | - | - | ±100 |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=20A | mΩ | - | 4.8 | 6.0 |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | V | - | 0.92 | 1.2 |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/μs | ns | - | 57 | - |
| Reverse Recovery Charge | Qrr | nC | - | 98 | - | |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | Ω | - | 3 | - |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 3660 | - |
| Output Capacitance | Coss | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 1540 | - |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 15 | - |
| Turn-on Delay Time | td(ON) | VDD= 40V,RG=4.0Ω, IDS= 50A,VGS= 10V | ns | - | 16 | - |
| Turn-on Rise Time | Tr | VDD= 40V,RG=4.0Ω, IDS= 50A,VGS= 10V | ns | - | 89 | - |
| Turn-off Delay Time | td(OFF) | VDD= 40V,RG=4.0Ω, IDS= 50A,VGS= 10V | ns | - | 44 | - |
| Turn-off Fall Time | Tf | VDD= 40V,RG=4.0Ω, IDS= 50A,VGS= 10V | ns | - | 93 | - |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 60 | - |
| Gate-Source Charge | Qgs | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 20 | - |
| Gate-Drain Charge | Qgd | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 14 | - |
2409271703_HUAYI-HYG055N08NS1C2_C2900843.pdf
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