Avalanche Tested HUAYI HYG011N04LS1TA N Channel MOSFET 40V 320A for Switching and Battery Management
Key Attributes
Model Number:
HYG011N04LS1TA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
320A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
5.87nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
HYG011N04LS1TA
Package:
TOLL
Product Description
Product Overview
The HYG011N04LS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low on-state resistance of 0.9 m (typ.) at VGS = 10V and 1.3 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Part Number | Feature | RDS(ON) (typ.)@VGS=10V | RDS(ON) (typ.)@VGS=4.5V | VDSS | ID (Tc=25C) | Application |
| HYG011N04LS1TA | N-Channel Enhancement Mode MOSFET, 40V/320A, 100% Avalanche Tested, Reliable and Rugged | 0.9 m | 1.3 m | 40 V | 320 A | Switching application, Power management for inverter systems, Battery management |
2409271603_HUAYI-HYG011N04LS1TA_C2874971.pdf
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