Low On Resistance MOSFET HUAYI HY4008B N Channel Enhancement Mode Device for Power Management and Switching
Key Attributes
Model Number:
HY4008B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-
RDS(on):
3.5mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 N-channel
Output Capacitance(Coss):
1.029nF
Input Capacitance(Ciss):
8.154nF
Pd - Power Dissipation:
345W
Gate Charge(Qg):
197nC@10V
Mfr. Part #:
HY4008B
Package:
TO-263-2L
Product Description
Product Overview
The HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in various lead-free and green (RoHS compliant) package options.
Product Attributes
- Brand: HOOYI
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Model | Package | Drain-Source Voltage (V) | Continuous Drain Current (A) TC=25C | RDS(ON) (m) VGS=10V | Typical Gate Charge (nC) |
| HY4008P/M/B/PS/PM | TO-3PS-3M | 80 | 200 (TC=25C) | 3.5 | 197 |
| HY4008P/M/B/PS/PM | TO-3PS-3L | 80 | 200 (TC=25C) | 3.5 | 197 |
| HY4008P/M/B/PS/PM | TO-263-2L | 80 | 200 (TC=25C) | 3.5 | 197 |
| HY4008P/M/B/PS/PM | TO-220FB-3M | 80 | 200 (TC=25C) | 3.5 | 197 |
| HY4008P/M/B/PS/PM | TO-220FB-3L | 80 | 200 (TC=25C) | 3.5 | 197 |
2410121613_HUAYI-HY4008B_C110332.pdf
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