Low On Resistance MOSFET HYG060N08NS1D with TO 251 3S Package and Lead Free RoHS Compliant Design
Key Attributes
Model Number:
HYG060N08NS1D
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
1.15nF
Input Capacitance(Ciss):
2.96nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
48nC
Mfr. Part #:
HYG060N08NS1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG060N08NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features low on-resistance (RDS(ON)=5.7 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | PD (W) |
|---|---|---|---|---|---|---|
| HYG060N08NS1D/U/V | TO-252-2L | 80 | 80 | 5.7 (typ.) | 2-4 | 75 |
| HYG060N08NS1D/U/V | TO-251-3L | 80 | 80 | 5.7 (typ.) | 2-4 | 75 |
| HYG060N08NS1D/U/V | TO-251-3S | 80 | 80 | 5.7 (typ.) | 2-4 | 75 |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 80 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS= 80V,VGS=0V | - | - | 1 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=40A | - | 5.7 | 6.5 | m |
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.94 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/s | - | 45 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 63 | - | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 3.2 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 2960 | - | pF |
| Output Capacitance (Coss) | - | - | 1150 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 60 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD= 40V,RG=4.0, IDS= 40A,VGS= 10V | - | 13 | - | ns |
| Turn-on Rise Time (Tr) | - | - | 69 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 33 | - | ns |
| Turn-off Fall Time (Tf) | - | - | 84 | - | ns |
| Total Gate Charge (Qg) | VDS = 64V, VGS= 10V, IDs= 40A | - | 48 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 15 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 13 | - | nC |
2410121246_HUAYI-HYG060N08NS1D_C2827238.pdf
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