650V 90A IGBT transistor HXY MOSFET APT70GR65B-HXY TO247 package for electronic applications
Key Attributes
Model Number:
APT70GR65B-HXY
Product Custom Attributes
Pd - Power Dissipation:
330W
Td(off):
130ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
23pF
Input Capacitance(Cies):
2.81nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
104nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
215pF
Reverse Recovery Time(trr):
95ns
Switching Energy(Eoff):
920uJ
Turn-On Energy (Eon):
2.04mJ
Mfr. Part #:
APT70GR65B-HXY
Package:
TO-247
Product Description
Product Overview
The APT70GR65B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for demanding power electronics systems.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT70GR65B
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Value | Units |
| Absolute Maximum Ratings | ||||
| VCE | Collector emitter voltage | @ TVJ = 25C | 650 | V |
| IC | DC collector current(1) | TC = 25C | 90 | A |
| IC | DC collector current(1) | TC = 100C | 75 | A |
| ICM | Pulsed collector current | TC = 25C | 300 | A |
| IF | Maximum Diode forward current(1) | TC = 25C | 90 | A |
| IF | Maximum Diode forward current(1) | TC = 100C | 75 | A |
| IFM | Diode pulsed current | TC = 25C | 300 | A |
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V |
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V |
| Ptot | Power Dissipation | TC = 25C | 330 | W |
| Ptot | Power Dissipation | TC = 100C | 160 | W |
| TVJ | Operating Junction Temperature Range | -40 to +175 | C | |
| TSTG | Storage Temperature Range | -55 to +150 | C | |
| Key Performance and Package Parameters | ||||
| VCE(SAT) | Collector - Emitter Saturation Voltage | TVJ = 25 C, VGE = 15 V, IC = 75A | 1.6 | V |
| VF | Diode forward voltage | TVJ = 25 C, IF=40A | 1.85 | V |
| Thermal Resistance | ||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |
| RJC | IGBT Thermal resistance: junction - case | 0.45 | C/W | |
| RJC | Diode Thermal resistance: junction - case | 0.54 | C/W | |
| Electrical Characteristics | ||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A | 1.6 - 2.1 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 125C | 1.86 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 175C | 2.0 | V |
| VF | Diode forward voltage | VGE = 0V , IC =75A | 1.85 - 2.1 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 125C | 1.55 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 175C | 1.4 | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 - 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | 75 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 75A | 86 | S |
| Dynamic Characteristics | ||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 2810 | pF |
| Coes | Output Capacitance | 215 | pF | |
| Cres | Reverse Transfer Capacitance | 23 | pF | |
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 75A | 104 | nC |
| Qge | Gate to Emitter charge | 15 | nC | |
| Qgc | Gate to Collector charge | 30 | nC | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 400V, IC= 75A, RG(off) = 8 | 20 | ns |
| tr | Turn-On Rise Time | 30 | ns | |
| td(off) | Turn-Off Delay Time | 130 | ns | |
| tf | Turn-Off Fall Time | 32 | ns | |
| Eon | Turn-on energy | 2.04 | mJ | |
| Eoff | Turn-off energy | 0.92 | mJ | |
| Ets | Total switching energy | 2.96 | mJ | |
| Diode Recovery Characteristics | ||||
| Trr | Reverse recovery time | VR = 400 V, IF = 75 A, di/dt = 800 A/S | 95 | ns |
| Qrr | Reverse recovery charge | 1.87 | mC | |
| Irrm | Peak reverse recovery current | 8.0 | A | |
Applications
- UPS
- EV-Charger
- Solar String Inverter
- Energy Storage Inverter
2509181739_HXY-MOSFET-APT70GR65B-HXY_C49003472.pdf
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