N Channel Enhancement Mode MOSFET HUAYI HY3708B with 80V Voltage and RoHS Compliant Lead Free Design
Key Attributes
Model Number:
HY3708B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
170A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
530pF
Number:
1 N-channel
Output Capacitance(Coss):
995pF
Pd - Power Dissipation:
288W
Input Capacitance(Ciss):
6.109nF
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
HY3708B
Package:
TO-263-2L
Product Description
Product Overview
The HY3708 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 170A. Key features include a low on-resistance of 3.8 m (typ.) at VGS=10V, reliability, and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Product Series: HY3708
- Channel Type: N-Channel Enhancement Mode
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Origin: Xin, Huayi Microelectronics Co., Ltd.
Technical Specifications
| Model | Package Type | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | VGS(th) (V) | EAS (mJ) | PD (W) |
| HY3708P/M/B/PS/PM | TO-220FB-3L | 80 | 170 (typ.) | 3.8 (typ.) | 2.0-4.0 | 660** | 288 (max.) |
| HY3708P/M/B/PS/PM | TO-220FB-3S | ||||||
| HY3708P/M/B/PS/PM | TO-3PS-3L | ||||||
| HY3708P/M/B/PS/PM | TO-3PM-3S | ||||||
| HY3708P/M/B/PS/PM | TO-263-2L |
2409302232_HUAYI-HY3708B_C2900840.pdf
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