Low On Resistance N Channel MOSFET HUAYI HY4504B6 with 40V Voltage Rating and High Current Capacity
Key Attributes
Model Number:
HY4504B6
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
322A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.112nF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.966nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
208nC@10V
Mfr. Part #:
HY4504B6
Package:
TO-263-6
Product Description
Product Overview
The HY4504B6 is an N-Channel Enhancement Mode MOSFET designed for various switching applications. It features a 40V/322A rating with a low on-resistance of 1.5m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. Key applications include switch applications, brushless motor drives, DC-DC converters, and electric power steering.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Package Code: B6 (TO-263-6L)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 40 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Maximum Junction Temperature | C | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current | A | 322 | |||
| IDM | Pulsed Drain Current * | A | 1058 | |||
| IS | Source Current-Continuous(Body Diode) | A | 322 | |||
| PD | Maximum Power Dissipation | W | 375 | |||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 0.40 | |||
| RJA | Thermal Resistance, Junction-to-Ambient ** | C/W | 40 | |||
| EAS | Single Pulsed-Avalanche Energy (L=1mH) *** | mJ | 2373 | |||
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V,IDS=250A) | V | 40 | |||
| IDSS | Drain-to-Source Leakage Current (VDS=40V,VGS=0V) | A | 1 | |||
| IDSS | Drain-to-Source Leakage Current (VDS=40V,VGS=0V) | A | 50 | |||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS=250A) | V | 2 | 3 | 4 | |
| IGSS | Gate-Source Leakage Current (VGS=20V,VDS=0V) | nA | 100 | |||
| RDS(ON)* | Drain-Source On-State Resistance (VGS=10V,IDS=140A) | m | 1.5 | 2.0 | ||
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage (ISD=140A,VGS=0V) | V | 0.8 | 1.2 | ||
| trr | Reverse Recovery Time (ISD=140A,dISD/dt=100A/s) | ns | 38 | |||
| Qrr | Reverse Recovery Charge | nC | 62 | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance (VGS=0V,VDS=0V, F=1 MHz) | 2.2 | ||||
| Ciss | Input Capacitance (VGS=0V, VDS=25V, Frequency=1.0MHz) | pF | 7966 | |||
| Coss | Output Capacitance | pF | 1753 | |||
| Crss | Reverse Transfer Capacitance | pF | 1112 | |||
| td(ON) | Turn-on Delay Time (VDD=20V,RG=4, IDS=140A,VGS=10V) | ns | 35 | |||
| Tr | Turn-on Rise Time | ns | 20 | |||
| td(OFF) | Turn-off Delay Time | ns | 45 | |||
| Tf | Turn-off Fall Time | ns | 62 | |||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge (VDS =32V, VGS=10V, ID=140A) | nC | 208 | |||
| Qgs | Gate-Source Charge | nC | 33 | |||
| Qgd | Gate-Drain Charge | nC | 83 | |||
2410121740_HUAYI-HY4504B6_C358121.pdf
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