N Channel Enhancement MOSFET HUAYI HY4004A 40V 208A Low On Resistance for Power Management Solutions
Key Attributes
Model Number:
HY4004A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
208A
Operating Temperature -:
-40℃~+175℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
596pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
268W
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
158nC
Mfr. Part #:
HY4004A
Package:
TO-3P-3
Product Description
Product Overview
The HY4004W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high current capability (40V/208A) with a low on-resistance (RDS(ON)= m typ. @ VGS=10V), ensuring efficient operation. This device is reliable, rugged, and 100% avalanche tested, with halogen-free and green device options available, making it RoHS compliant.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Halogen free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| HY4004W/A | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | - | - | 40 | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=40V, VGS=0V | - | - | 1 | A | |
| Zero Gate Voltage Drain Current (IDSS) | TJ=85C | - | - | 10 | A | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2.0 | 3.0 | 4.0 | V | |
| Gate Leakage Current (IGSS) | VGS=20V, VDS=0V | - | - | 100 | nA | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=104A | - | 0.56 | - | m | |
| Diode Forward Voltage (VSD) | ISD=104A, VGS=0V | - | 0.8 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=104A, dlSD/dt=100A/s | - | 36 | - | ns | |
| Reverse Recovery Charge (Qrr) | ISD=104A, dlSD/dt=100A/s | - | 58 | - | nC | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5700 | - | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1465 | - | pF | |
| HY4004W/A | Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 596 | - | pF |
| HY4004W/A | Turn-on Delay Time (td(ON)) | VDD=20V, RG=6 , I DS =104A, VGS=10V | - | 35 | - | ns |
| Turn-on Rise Time (Tr) | VDD=20V, RG=6 , I DS =104A, VGS=10V | - | 62 | - | ns | |
| Turn-off Delay Time (td(OFF)) | VDD=20V, RG=6 , I DS =104A, VGS=10V | - | 45 | - | ns | |
| Turn-off Fall Time (Tf) | VDD=20V, RG=6 , I DS =104A, VGS=10V | - | 30 | - | ns | |
| HY4004W/A | Total Gate Charge (Qg) | VDS=32V, VGS=10V, IDS=104A | - | 158 | - | nC |
| Gate-Source Charge (Qgs) | VDS=32V, VGS=10V, IDS=104A | - | 66 | - | nC | |
| Gate-Drain Charge (Qgd) | VDS=32V, VGS=10V, IDS=104A | - | - | - | nC |
2410121810_HUAYI-HY4004A_C2974611.pdf
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